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hdmostm Datasheet PDF File

For hdmostm Found Datasheets File :: 357 Search Time::1.421ms
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				IXYS Corporation
Part No.	IXTH88N15 IXTT88N15
OCR Text	... standard packages Low RDS (on) hdmostm process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density...
Description	Discrete MOSFETs: Standard N-channel Types HIGH CURRENT POWER MOSFET
File Size	109.53K / 2 Page	View it Online	Download Datasheet

				Directed Energy IXYS[IXYS Corporation]
Part No.	IXDD408CI IXDD408PI IXDD408SI IXDD408YI
OCR Text	... compatibility of CMOS and IXYS hdmostm processes. * Latch Up Protected * High Peak Output Current: 8A Peak * Operates from 4.5V to 25V * Ability to Disable Output under Faults * High Capacitive Load Drive Capability: 2500pF in <15ns * Matc...
Description	8 Amp Low-Side Ultrafast MOSFET Driver
File Size	269.81K / 10 Page	View it Online	Download Datasheet

				IXYS, Corp. IXYS[IXYS Corporation]
Part No.	IXFH12N50F IXFT12N50F
OCR Text	... gate resistance l Low RDS (on) hdmostm process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC con...
Description	HiPerRF Power MOSFETs F-Class: MegaHertz Switching 12 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
File Size	300.62K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFK26N60Q IXFX26N60Q
OCR Text	...ity classification Low RDS (on) hdmostm process Rugged polysilicon gate cell structure Avalanche energy and current rated Fast intrinsic Rectifier Advantages l l l VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % ...
Description	HiPerFET Power MOSFETs Q-Class
File Size	102.15K / 2 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXFR180N085
OCR Text	...pacitance(<25pF) * Low RDS (on) hdmostm process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Fast intrinsic Rectifier Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-...
Description	Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET-TM Power MOSFETs ISOPLUS247-TM (Electrically Isolated Back Surface)
File Size	33.36K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXTH6N120 IXTT6N120
OCR Text	... standard packages Low RDS (on) hdmostm process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density...
Description	Discrete MOSFETs: Standard N-channel Types High Voltage Power MOSFET
File Size	583.95K / 4 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXGR50N60BD1 IXGR50N60B
OCR Text	...ng capability Latest generation hdmostm process MOS Gate turn-on - drive simplicity Applications Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC chopper...
Description	HiPerFAST IGBT ISOPLUS247
File Size	561.74K / 5 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXTH12N120
OCR Text	...ge JEDEC TO-247 AD Low RDS (on) hdmostm process Rugged polysilicon gate cell structure Fast switching times Mounting torque 1.13/10 Nm/lb.in. 6 300 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s App...
Description	Discrete MOSFETs: Standard N-channel Types Power MOSFET, Avalanche Rated High Voltage
File Size	541.76K / 4 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXTH50P085
OCR Text	... JEDEC TO-247 AD * Low RDS (on) hdmostm process 1.13/10 Nm/lb.in. 6 g * * * Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance (<5 nH) - easy to drive and to protect Symbol ...
Description	Standard Power MOSFET
File Size	538.71K / 4 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXTK120N25
OCR Text	... 300 0.7/6 10 * Low RDS (on) hdmostm process * Rugged polysilicon gate cell structure * International standard package * Fast switching times Applications Symbol Test Conditions (TJ = 25C unless otherwise specified) VDSS VGS(th) IGSS...
Description	High Current MegaMOSFET
File Size	84.51K / 2 Page	View it Online	Download Datasheet

For hdmostm Found Datasheets File :: 357 Search Time::1.421ms
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