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  gate-igbt Datasheet PDF File

For gate-igbt Found Datasheets File :: 12318    Search Time::1.796ms    
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    GA250TS60U

IRF[International Rectifier]
Part No. GA250TS60U
OCR Text ...entR Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Max...IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting...
Description 600V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

File Size 226.75K  /  10 Page

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    GA75TS60U

IRF[International Rectifier]
Part No. GA75TS60U
OCR Text ...rent Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Max...IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting...
Description    HALF-BRIDGE IGBT INT-A-PAK

File Size 213.44K  /  10 Page

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    HGTG11N120CND

FAIRCHILD[Fairchild Semiconductor]
Part No. HGTG11N120CND
OCR Text .... . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...IGBT and Diode at TJ = 25oC, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10 , L = 2mH, Test Circuit (Figu...
Description 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 108.55K  /  8 Page

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    HGTG24N60D1D

INTERSIL[Intersil Corporation]
Part No. HGTG24N60D1D
OCR Text ...STYLE TO-247 EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL) Features * 24A, 600V * Latch Free Operation * Typical Fall Time <500n...IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar...
Description 3.3V 36-mc CPLD
24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
24A/ 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode

File Size 35.26K  /  5 Page

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    HGTG24N60D1

INTERSIL[Intersil Corporation]
Part No. HGTG24N60D1
OCR Text GATE COLLECTOR (BOTTOM SIDE METAL) Features * 24A, 600V * Latch Free Operation * Typical Fall Time <500ns * High Input Impedance * Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device combining the b...
Description 24A/ 600V N-Channel IGBT
24A, 600V N-Channel IGBT

File Size 32.04K  /  4 Page

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    SKM400GB12T4-13

Semikron International
Part No. SKM400GB12T4-13
OCR Text ...ing capability with integrated gate resistor for higher switching frequenzies up to 20khz ul recognized, file no. e63532 typical applica...igbt 0.072 k/w skm400gb12t4 2 rev. 3 C 03.09.2013 ? by semikron characteristics symbol conditions...
Description Fast IGBT4 Modules

File Size 384.64K  /  5 Page

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    HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N120BNST

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N120BNST
OCR Text .... . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode i...
Description 1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape &amp; Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
35A/ 1200V/ NPT Series N-Channel IGBT
35A, 1200V, NPT Series N-Channel IGBT
35 A, 1200 V, NPT N-Channel IGBT

File Size 175.79K  /  8 Page

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    SKM400GB12E4-13

Semikron International
Part No. SKM400GB12E4-13
OCR Text ...ing capability with integrated gate resistor for higher switching frequenzies up to 12khz ul recognized, file no. e63532 typical applica...igbt 0.072 k/w skm400gb12e4 2 rev. 4 C 21.08.2013 ? by semikron characteristics symbol conditions...
Description IGBT4 Modules

File Size 384.83K  /  5 Page

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    Infineon Technologies A...
Part No. IHW40T60 IHW40T60-13
OCR Text ...ure coefficient ? low emi ? low gate charge ? qualified according to jedec 1 for target applications ? pb-free lead plating; rohs compliant ...igbt/ applications: ? inductive cooking ? soft & hard switching applications type v ce i c v ce(sat ...
Description IGBT in TRENCHSTOP technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

File Size 577.35K  /  13 Page

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    HGTP10N40F1D HGTP10N50F1D

INTERSIL[Intersil Corporation]
Part No. HGTP10N40F1D HGTP10N50F1D
OCR Text ...DEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features * 10A, 400V and 500V * Latch Free Operation * Typical Fall Time < 1.4s ...IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar...
Description 10A 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

File Size 33.70K  /  5 Page

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For gate-igbt Found Datasheets File :: 12318    Search Time::1.796ms    
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