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  f-mos Datasheet PDF File

For f-mos Found Datasheets File :: 26634    Search Time::4.453ms    
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    2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00

NEC[NEC]
Part No. 2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00
OCR Text ...0 -20 40 IAS EAS Notes 1. f = 20 kHz, Duty Cycle 10% (+Side) 2. PW 10 s, Duty Cycle 1 % 3. Starting Tch = 25 C, RA = 25 , VGS = -20 V 0 THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 1.79 83.3 C/W C/...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 70.31K  /  8 Page

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    2SJ493 D11265EJ3V0DS00

NEC[NEC]
Part No. 2SJ493 D11265EJ3V0DS00
OCR Text ...-16 25.6 IAS EAS Notes 1. f = 20 kHz, Duty Cycle 10% (+Side) 2. PW 10 s, Duty Cycle 1 % 3. Starting Tch = 25 C, RA = 25 , VGS = -20 V 0 THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 4.17 62.5 C/W C/...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 64.87K  /  8 Page

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    2SJ494 D11266EJ2V0DS00

NEC[NEC]
Part No. 2SJ494 D11266EJ2V0DS00
OCR Text ...D TO-220 (MP-45F) Drain * f = 20 kHz, Duty Cycle d 10% (+Side) ** PW d 10 Ps, Duty Cycle d 1% Gate Body Diode THERMAL RESISTA...MOS FET features and application to switching power supply Application circuits using Power MOS FET ...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 68.73K  /  8 Page

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    2SJ495 2SJ295 D11267EJ2V0DS00

NEC[NEC]
Part No. 2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text ...emperature Storage Temperature *f = 20 kHz, Duty Cycle 10% (+Side) **PW 10 s, Duty Cycle 1% VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT...MOS FET features and application to switching power supply Application circuits using Power MOS FET ...
Description From old datasheet system
MOS Field Effect Power Transistors
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 72.23K  /  8 Page

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    TDA7293

STMicroelectronics
Part No. TDA7293
OCR Text ... RL = 8, Rg = 50 ; T amb = 25C, f = 1 kHz; unless otherwise specified). Symbol VS Iq Ib VOS IOS PO Parameter Supply Range Quiescent Current...MOS devices, which are immune from secondary breakdown is highly desirable. The device described has...
Description 120V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY

File Size 332.23K  /  13 Page

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    Holtek Semiconductor In...
Part No. HT7963
OCR Text ...l pull down resistance 500 k f dim dimming frequency dim pin 100 1000 hz f duty dimming duty cycle dim pin 0 100 % t shd shutdown mode ...mos fet . if the inductor current reaches the current limit threshold , which is when...
Description LED Backlight Driver

File Size 686.53K  /  11 Page

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    Advanced Power Technology, Ltd.
Part No. APT5024SLL APT5024BLL
OCR Text ...88-0364 europe chemin de magret f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 d 3 pak bll sll apt5024bll apt5024sll 500v 22a 0.240 power mos 7 tm is a new generation of low loss, high voltage, n-channel enh...
Description Volts:500V RDS(ON):0.24Ohms ID(cont:)22Amps|MOSFETs 电压00V电压的RDS(ON):0.24Ohms编号(续:)22安培| MOSFET

File Size 70.28K  /  4 Page

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    NXP Semiconductors N.V.
Part No. BSP090/T3
OCR Text ...itance v gs = 0; v ds = - 24 v; f = 1 mhz - 800 - pf c oss output capacitance v gs = 0; v ds = - 24 v; f = 1 mhz - 400 - pf c rss reverse tr...mos transistor bsp090 fig.4 switching time test circuit; input and output waveforms. handbook, full...
Description 5.7 A, 30 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET PLASTIC, SMD, 4 PIN

File Size 88.25K  /  12 Page

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    APT10050B2VR

Advanced Power Technology
Part No. APT10050B2VR
OCR Text ...er.com Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Co...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 21A 0.500 Ohm

File Size 58.87K  /  4 Page

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