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Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
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| Part No. |
H5PS5162FFR-S5 H5PS5162FLFR-S5
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| OCR Text |
...? self-refresh high temperature entry ? partial array self refresh support ordering information part no. organization package h5ps5162f(l)fr**-x* 32mx16 lead & halo- gen free** note: 1. -x* is the speed bin, refer to the operation freque... |
| Description |
DDR DRAM, PBGA84 ROHS COMPLIANT, FPBGA-84
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| File Size |
525.82K /
39 Page |
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it Online |
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Hynix Semiconductor, Inc.
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| Part No. |
H5PS5142FFP-S5C H5PS5182FFP-S5C H5PS5142FFP-S5L
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| OCR Text |
...? self-refresh high temperature entry ? partial array self refresh support ordering information part no. organization package h5ps5142ffp-xx* 128mx4 lead free** h5ps5182ffp-xx* 64mx8 note: 1. -x* is the speed bin, refer to the operation ... |
| Description |
128M X 4 DDR DRAM, 0.4 ns, PBGA60 ROHS COMPLIANT, FBGA-60
64M X 8 DDR DRAM, 0.4 ns, PBGA60 ROHS COMPLIANT, FBGA-60
128M X 4 DDR DRAM, PBGA60 ROHS COMPLIANT, FBGA-60
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| File Size |
520.18K /
41 Page |
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it Online |
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Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
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| Part No. |
H5PS1G63JFR-E3J H5PS1G63JFR-E3C
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| OCR Text |
...? self-refresh high temperature entry 1. description
rev. 1.0 / mar. 2011 ...level 3.2.2 input ac logic level 3.2.3 ac input test conditions note: 1. input waveform timing is... |
| Description |
64M X 16 DDR DRAM, PBGA84 ROHS COMPLIANT AND HALOGEN FREE, FBGA-84
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| File Size |
820.66K /
62 Page |
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it Online |
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Infineon Technologies AG
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| Part No. |
HYB39S64160ETL-8 HYB39S64400ETL-8 HYB39S64400ETL-7.5 HYB39S64800ETL-7.5 HYB39S64800ETL-8
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| OCR Text |
...als. 4. power down mode can not entry in the burst cycle. when this command assert in the burst mode cycle device is clock suspend mode. operation device state cke n-1 cke n cs ras cas we dqm a0-9, a11 a10 ba0 ba1 row activate (act) idle ... |
| Description |
4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54
16M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54
16M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54
8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54
8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54
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| File Size |
371.32K /
55 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH32S72AVJA-6 B00010
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| OCR Text |
...eselect No Operation Row Adress Entry & Bank Activate Single Bank Precharge Precharge All Bank Column Address Entry & Write Column Address E...Level, L = Low Level, V = Valid, X = Don't Care, n = CK cycle number NOTE: 1.A7-9 = 0, A0-6 = Mode A... |
| Description |
From old datasheet system
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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| File Size |
949.30K /
56 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH32S72VJA-6 B99038
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| OCR Text |
...eselect No Operation Row Adress Entry & Bank Activate Single Bank Precharge Precharge All Bank Column Address Entry & Write Column Address E...Level, L = Low Level, V = Valid, X = Don't Care, n = CK cycle number NOTE: 1.A7-9 = 0, A0-6 = Mode A... |
| Description |
From old datasheet system
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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| File Size |
931.72K /
56 Page |
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it Online |
Download Datasheet |
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Hynix Semiconductor, Inc.
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| Part No. |
HY5PS2G831CMP-S5 HY5PS2G831CMP-C4 HY5PS2G831CMP-S6
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| OCR Text |
...? self-refresh high temperature entry 1. description
rev. 0.2 / aug. 2007 ...level 3.2.2 input ac logic level 3.2.3 ac input test conditions note: 1. input waveform timing is... |
| Description |
256M X 8 DDR DRAM, 0.4 ns, PBGA63 ROHS COMPLIANT, FBGA-63
256M X 8 DDR DRAM, 0.5 ns, PBGA63 ROHS COMPLIANT, FBGA-63
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| File Size |
573.70K /
44 Page |
View
it Online |
Download Datasheet |
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