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				Toshiba Semiconductor
Part No.	TK20P04M1
OCR Text	...0 v) (4) low leakage current: i dss = 10 a (max) (v ds = 40 v) (5) enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 0.1 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and intern...
Description	DC-DC Converters Switching Voltage Regulators
File Size	239.11K / 9 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TK14A55D
OCR Text	...p.) ? low leakage current: i dss = 10 a (max) (v ds = 550 v) ? enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source volta...
Description	Switching Regulator Applications
File Size	175.01K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TK12A55D
OCR Text	...yp.) ? low leakage current: i dss = 10 a (max) (v ds = 550 v) ? enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source volt...
Description	Switching Regulator Applications Switching Regulator Applications
File Size	182.42K / 6 Page	View it Online	Download Datasheet

				Xian Semipower Electronic Technology Co., Ltd. Xian Semipower Electron...
Part No.	SWP12N65 SW12N65 SWF12N65
OCR Text	...ter value unit to-220 to-220f v dss drain to source voltage 650 v i d continuous drain current (@t c =25 o c) 12.0 12.0* a continuous drain current (@t c =100 o c) 7.0 7.0* a i dm drain current pulsed ...
Description	N-channel MOSFET N-channel MOSFET
File Size	1,029.78K / 7 Page	View it Online	Download Datasheet

				Xian Semipower Electronic Technology Co., Ltd.
Part No.	SWP12N60 SWF12N60 SW12N60
OCR Text	...ter value unit to-220 to-220f v dss drain to source voltage 600 v i d continuous drain current (@t c =25 o c) 12.0 12.0* a continuous drain current (@t c =100 o c) 7.0 7.0* a i dm drain current pulsed ...
Description	N-channel MOSFET
File Size	929.73K / 7 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STB55NF06L-1
OCR Text	...di/dt 200a/s, v dd v (br)dss , t j t jmax. n typical r ds (on) = 0.014 w n exceptional dv/dt capability n application oriented characterization description this power mosfet is the latest development of stmicroelectronics unique...
Description	N-CHANNEL POWER MOSFET
File Size	597.24K / 12 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STB55NF06-1
OCR Text	... converters n automotive type v dss r ds(on) i d stp55nf06 stb55nf06-1 stb55nf06 stp55nf06fp 60 v 60 v 60 v 60 v <0.018 w <0.018 w <0.018 w <0.018 w 50 a 50 a 50 a 50 a(*) 1 2 3 1 2 3 1 2 3 to-220 to-220fp 1 3 d 2 pak to-263 (suffix t4)...
Description	N-CHANNEL POWER MOSFET
File Size	569.58K / 12 Page	View it Online	Download Datasheet

				Stanson Technology
Part No.	ST7400
OCR Text	...l unit drainsource voltage v dss 30 v gatesource voltage v gss 12 v continuous drain currenttj=150 ) t a =25 t a =70 i d 2.8 2.3 a pulsed drain current i dm 10 a continuous source current (diode conduction) ...
Description	ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
File Size	384.85K / 8 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TK2A65D
OCR Text	...yp.) (3) low leakage current: i dss = 10 a (max) (v ds = 650 v) (4) enhancement mode: v th = 2.4 to 4.4 v (v ds = 10 v, i d = 1 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and internal ...
Description	Switching Voltage Regulators
File Size	229.46K / 9 Page	View it Online	Download Datasheet

For dss Found Datasheets File :: 37510 Search Time::2.25ms
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