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diode-30v Datasheet PDF File

For diode-30v Found Datasheets File :: 19047 Search Time::1.171ms
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				Advanced Power Electronics Corp. Advanced Power Electron...
Part No.	AP4523GD AP4523GD-14
OCR Text	...ce f=1.0mhz - 2 3 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.5a, v gs =0v - ...30v - 3 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 6 - nc t d(on) turn-on delay time 2 v d...
Description	Low Gate Charge, Fast Switching Speed, PDIP-8 Package
File Size	95.27K / 7 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	RFP70N03 RF1S70N03 RF1S70N03SM
OCR Text	...tion to Case Thermal Resistance Diode Junction to Ambient IGSS rDS(ON) tON tD(ON) tR tD(OFF) tF tOFF QG(TOT) QG(10) QG(TH) CISS COSS CRSS RJ...30V 1 1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 50 100 10 10 If R = 0 tAV = (L) (IAS)/(1.3 x...
Description	70A/ 30V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
File Size	588.19K / 6 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP4521GEM
OCR Text	...=1.0mhz - 1.8 2.7 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.5a, v gs =0v - ...30v - 1.3 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 3.5 - nc t d(on) turn-on delay time 2...
Description	Simple Drive Requirement, Fast Switching Performance
File Size	112.52K / 7 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp. Advanced Power Electronics ...
Part No.	AP4521GEH AP4521GEH-14
OCR Text	...1.0mhz - 1.8 2.7 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =8a, v gs =0v - - ...30v - 1.3 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 3.6 - nc t d(on) turn-on delay time 2...
Description	Simple Drive Requirement, Good Thermal Performance
File Size	115.09K / 7 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor
Part No.	MAX1813EVKIT
OCR Text	...0805) Not installed 5A Schottky diode Central Semiconductor CMSH5-40 100mA Schottky diode Central Semiconductor CMPSH-3 C1-C4, C20 5 ...30V output for the impedancemode configuration through jumpers JUB4, JUB2, and JUB1, and to 1.15V ou...
Description	Evaluation Kit for the MAX1813 From old datasheet system
File Size	366.80K / 11 Page	View it Online	Download Datasheet

				Maxim Integrated Products, Inc. MAXIM - Dallas Semiconductor
Part No.	MAX1739EVKIT-MAX1739EVSYS MAX1739EVKIT
OCR Text	... TMK325BJ475MN 30V, 1A Schottky diode Toshiba CRS02 Nihon EP10QY03 100mA Schottky diode Fairchild BAT54 General Semiconductor BAT54 Diodes Inc. BAT54 100mA dual-series diode Fairchild Semiconductor MMBD4148SE General Semiconductor MMBD7000 ...
Description	Evaluation System/Evaluation Kit for the MAX1739 MAX1739评估系统/评估 From old datasheet system
File Size	373.26K / 7 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP4563GH
OCR Text	... 2 1100 1760 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=20A, VGS=0V IS=20A, VGS=0V d...30V VGS=-4.5V VDS=-20V ID=-1A RG=3.3,VGS=-10V RD=20 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source...
Description	30V N-Channel PowerTrench MOSFET N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	81.29K / 7 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP4563GM
OCR Text	... 2 1100 1760 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=6A, VGS=0V IS=6A, VGS=0V dI/...30V VGS=-4.5V VDS=-20V ID=-1A RG=3.3,VGS=-10V RD=20 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source...
Description	30V N-Channel PowerTrench MOSFET N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	81.17K / 7 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP4569GD
OCR Text	...e Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=1.5A, VGS=0V IS=4A, VGS=0V d...30V VGS=-4.5V VDS=-20V ID=-1A RG=3.3,VGS=-10V RD=20 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source...
Description	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	95.07K / 7 Page	View it Online	Download Datasheet

For diode-30v Found Datasheets File :: 19047 Search Time::1.171ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |