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				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K4S280432F K4S280432F-TC75 K4S280432F-TL75 K4S281632F-TL75 K4S280832F-TC75 K4S280832F-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60
OCR Text	...32F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words...8m x 16 Max Freq. 133MHz (CL=3) 133MHz (CL=3) 166MHz (CL=3) LVTTL 54pin TSOP(II) Interface Package ...
Description	RES, 16.9, 1/16W, TKF, 1%, 0603 TV 11C 11#12 PIN RECP 128mB F-DIE SDRAM SPECIFICATION
File Size	140.81K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K4S280432E K4S280432E-TL75 K4S280432E-TC75 K4S281632E-TL75 K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60
OCR Text	...32E / K4S281632E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words...8m x 16 Max Freq. 133MHz 133MHz 166MHz Interface LVTTL LVTTL LVTTL Package 54pin TSOP 54pin TSOP 54p...
Description	128mb E-die SDRAM Specification 128mb的电子芯片内存规
File Size	142.99K / 14 Page	View it Online	Download Datasheet

				EMC[ELAN Microelectronics Corp]
Part No.	EM39LV088 EM39LV088-90H EM39LV088-90D EM39LV088-90M EM39LV088-90RD EM39LV088-90RH EM39LV088-90RM EM39LV088-70RD EM39LV088-70RH EM39LV088-70RM EM39LV088-70D EM39LV088-70H EM39LV088-70M
OCR Text	bits (1Mx8) Flash Memory SPECIFICATION General Description The EM39LV088 is an 8m bits Flash memory organized as 1M x 8 bits. The EM39LV088 uses 2.7-3.6V power supply for Program and Erase. Featuring high performance Flash memory techn...
Description	8m bits (1Mx8) Flash Memory
File Size	267.85K / 22 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	HYB39S128800CT-75 HYB39S128160CT-7.5 HYB39S128800CT-7.5 HYB39S128400CT-7 HYB39S128400CT-7.5 HYB39S128400CT-75 HYB39S128400CT-8 HYB39S128800CT-7 HYB39S128800CT-8 HYB39S128160CT-7 HYB39S128160CT-75 HYB39S128160CT-8
OCR Text	...ecture that prefetches multiple bits and then synchronizes the output data to a system clock. The chip is fabricated using the Infineon adva...8m x4 SDRAM PC133-333-520 P-TSOP-54 (400mil) 133 MHz 4B x 8m x4 SDRAM PC100-222-620 P-TSOP-54 (400mi...
Description	128-MBit Synchronous DRAM
File Size	316.21K / 51 Page	View it Online	Download Datasheet

				NEC
Part No.	UPD46128512F9-CR2 UPD46128512-X
OCR Text	...h speed, low power, 134,217,728 bits (8,388,608 words by 16 bits) CMOS Mobile Specified RAM featuring asynchronous page read and random writ...8m bits 0M bits 15 16M bits 8m bits bits 108 70 85 1.7 to 2.0 -30 to +85 60 ...
Description
File Size	790.46K / 82 Page	View it Online	Download Datasheet

				NEC
Part No.	UPD23C128040BL UPD23C128040BLGX UPD23C128040BLGX-XXX UPD23C128040BLGY-MJH UPD23C128040BLGY-MKH UPD23C128080BL UPD23C128080BLGX UPD23C128080BLGX-XXX UPD23C128080BLGY-MKH UPD23C128040BLGY-XXX-MJH UPD23C128040BLGY-XXX-MKH UPD23C128080BLGY-XXX-MJH UPD23C128080BLGY-XXX-MKH UPD23C128080BLGY-MJH
OCR Text	...PD23C128080BL are a 134,217,728 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 16,777,216 words by 8 bits, WOR...8m-word by 16-bit) Low level : BYTE mode (16M-word by 8-bit) A0 to A22 (Address inputs) Input Addres...
Description	128m-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8m-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
File Size	260.86K / 24 Page	View it Online	Download Datasheet

				Fujitsu
Part No.	MB8508S072CZ-103L MB8508S072CZ-102L MB8508S072CZ-103 MB8508S072CZ-102 E511140
OCR Text	...anized as four banks of 8 M x 8 bits and a 2K-bit serial EEPROM on a 168-pin glass-epoxy substrate. The MB8508S072CZ features a fully synchr...8m x 8 D0 DQM4 DQ (39:32) 10 8m x 8 D1 8m x 8 D2 DQM5 DQ (47:40) 10 8m x 8 D3 CB...
Description	8 M x 72 BIT SYNCHRONOUS DYNAMIC RAM DIMM From old datasheet system
File Size	266.99K / 20 Page	View it Online	Download Datasheet

				Fujitsu
Part No.	MB8516S072CZ-103L MB8516S072CZ-102L MB8516S072CZ-103 MB8516S072CZ-102 E511141
OCR Text	...anized as four banks of 8 M x 8 bits and a 2Kbit serial EEPROM on a 168-pin glass-epoxy substrate. The MB8516S072CZ features a fully synchro...8m x 8 D4 10 CS2 CS3 DQM2 DQ (23:16) 10 DQM3 DQ (31:24) 10 VCC RAS 10 K CKE1 CKE0 CKE: SDRAM D9-1...
Description	16 M x 72 BIT SYNCHRONOUS DYNAMIC RAM DIMM From old datasheet system
File Size	284.82K / 20 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPD29F064115F9-CD5 UPD29F064115GZ-MJH UPD29F064115F9-CD6 UPD29F064115F9-DB80X-CD5 UPD29F064115F9-DB80X-CD6 UPD29F064115F9-DB85X-CD5 UPD29F064115F9-DB85X-CD6 UPD29F064115F9-EB85X-CD5 UPD29F064115F9-EB85X-CD6 UPD29F064115F9-EB90X-CD5 UPD29F064115F9-EB90X-CD6 UPD29F064115GZ-DB80X-MJH UPD29F064115GZ-DB85X-MJH UPD29F064115GZ-EB85X-MJH UPD29F064115GZ-EB90X-MJH UPD29F064115-X
OCR Text	... memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can be erased at a low voltage (1.65 to 1.95 V, 1.8 to 2.1 V ) ...8m bits, 24M bits, 24M bits and 8m bits. Input /output voltage is supplied to 2.7 to 3.3 V. Because ...
Description	64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT (WORD MODE) PAGE MODE
File Size	245.54K / 32 Page	View it Online	Download Datasheet

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