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For a dd a Found Datasheets File :: 52925 Search Time::4.078ms
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				HITACHI[Hitachi Semiconductor]
Part No.	2SJ543
OCR Text	... -60 20 -20 -80 -20 Unit V V a a a a mJ W C C Body-drain diode reverse drain current I DR avalanche current avalanche energy Channel d...dd = -10 V -25 V -50 V V DS V GS V dd = -10 V -25 V -50 V 0 1000 500 V GS = -10 V, V dd = -30 ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	52.32K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ544
OCR Text	...-60 20 -30 -120 -30 Unit V V a a a a mJ W C C Body-drain diode reverse drain current I DR avalanche current avalanche energy Channel d...dd = -10 V -25 V -50 V V DS V GS (V) 0 0 1000 500 200 100 50 t d(on) 20 10 -0.1 -0.3 ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	53.22K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ545
OCR Text	... -60 20 -12 -48 -12 Unit V V a a a a mJ W C C Body-drain diode reverse drain current I DR avalenche current avalenche energy Channel d...dd = -10 V -25 V -50 V I D = -10 a 0 1000 300 100 30 10 3 1 -0.1 -0.2 V GS = -10 V, V dd = -30...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	50.81K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ546
OCR Text	... -60 20 -15 -60 -15 Unit V V a a a a mJ W C C Body-drain diode reverse drain current I DR avalanche current avalanche energy Channel d...dd = -10 V -25 V -50 V 0 V GS (V) 1000 Switching Characteristics Switching Time t (ns) ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	51.21K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ547
OCR Text	... -60 20 -10 -40 -10 Unit V V a a a a mJ W C C Body-drain diode reverse drain current I DR avalenche current avalenche energy Channel d...dd = -10 V -25 V -50 V V DS I D = -10 a 0 1000 300 100 30 10 3 1 -0.1 tf tr t d(on) V GS = -10...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	52.45K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ548
OCR Text	... -60 20 -15 -60 -15 Unit V V a a a a mJ W C C Body-drain diode reverse drain current I DR avalanche current avalanche energy Channel d...dd = -30 V 500 PW = 5 s, duty < 1 % Switching Time t (ns) 0 V dd = -10 V -25 V -50 V -20 -...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	51.21K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
Part No.	2SJ549 2SJ549L 2SJ549S
OCR Text	... -60 20 -12 -48 -12 Unit V V a a a a mJ W C C Body-drain diode reverse drain current I DR avalenche current avalenche energy Channel d...dd = -10 V -25 V -50 V I D = -10 a 0 1000 300 100 30 10 3 1 -0.1 -0.2 V GS = -10 V, V dd = -30...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
File Size	54.89K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor] http://
Part No.	2SJ550 2SJ550L 2SJ550S
OCR Text	... -60 20 -15 -60 -15 Unit V V a a a a mJ W C C Body-drain diode reverse drain current I DR avalanche current avalanche energy Channel d...dd = -10 V -25 V -50 V -4 V GS = -10 V, V dd = -30 V 500 PW = 5 s, duty < 1 % 200 100 50 tr 20...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	55.48K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ551 2SJ551L 2SJ551S
OCR Text	... -60 20 -18 -72 -18 Unit V V a a a a mJ W C C Body-drain diode reverse drain current I DR avalanche current avalanche energy Channel d...dd = -30 V 500 PW = 5 s, duty < 1 % Switching Time t (ns) 0 V dd = -10 V -25 V -50 V -20 -...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	54.47K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ552 2SJ552L 2SJ552S 2SJ552L/S
OCR Text	... -60 20 -20 -80 -20 Unit V V a a a a mJ W C C Body-drain diode reverse drain current I DR avalanche current avalanche energy Channel d...dd = -10 V -25 V -50 V V DS V GS V dd = -10 V -25 V -50 V 0 1000 500 V GS = -10 V, V dd = -30 ...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching Power switching MOSFET
File Size	55.15K / 9 Page	View it Online	Download Datasheet

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