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  860-900 Datasheet PDF File

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    LNA2601L

PANASONIC[Panasonic Semiconductor]
Part No. LNA2601L
OCR Text ...40 0 40 80 120 0 860 900 940 980 1020 1060 1100 Ambient temperature Ta (C ) Wavelength (nm) 2
Description GaAs Infrared Light Emitting Diode

File Size 40.32K  /  2 Page

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    MRF9085 MRF9085LR3 MRF9085LSR3

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF9085 MRF9085LR3 MRF9085LSR3
OCR Text ... GAIN (dB) 17 16 15 14 13 12 11 860 865 870 875 880 885 f, FREQUENCY (MHz) 890 895 900 IMD Gps h VDD = 26 Vdc Pout = 90 W (PEP) IDQ = 700 mA Two-Tone, 100 kHz Tone Spacing 50 45 40 35 -28 -30 -32 -34 -36 VSWR Freescale Semiconductor, ...
Description 128K 3.3 VOLT SERIAL CONFIGURATION PROM
880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

File Size 487.99K  /  8 Page

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    NE3210S01 NE3210S01-T1 NE3210S01-T1B

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. NE3210S01 NE3210S01-T1 NE3210S01-T1B
OCR Text ...0.904 0.907 0.907 0.900 0.881 0.860 0.846 ANG. -21.3 -27.9 -34.8 -41.5 -47.7 -53.6 -59.1 -64.8 -70.7 -77.9 -85.5 -95.5 -106.1 -117.9 -129.6 -140.4 -151.4 -162.1 -173.2 174.1 160.1 146.2 132.8 121.0 110.6 101.9 92.9 85.1 77.7 69.3 60.5 52.8 ...
Description Low Noise Amplifier N-Channel HJ-FET(低噪声N沟道结型场效应管) 低噪声放大器N沟道黄建忠场效应管(低噪沟道结型场效应管
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

File Size 60.47K  /  16 Page

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    SPA17N80C3 SPB17N80C3 SPP17N80C3

INFINEON[Infineon Technologies AG]
Part No. SPA17N80C3 SPB17N80C3 SPP17N80C3
OCR Text ... V(BR)DSS 550 920 900 880 860 840 820 800 780 760 740 C Tj 150 720 -60 -20 20 60 100 C 180 Tj Page 8 2003-07-03 Final data 17 Avalanche power losses PAR = f (f ) parameter: EAR =0.5mJ 500 SPP17...
Description for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
Cool MOS?/a> Power Transistor

File Size 330.70K  /  13 Page

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    SPW17N80C3

INFINEON[Infineon Technologies AG]
Part No. SPW17N80C3
OCR Text ... 5 6 V(BR)DSS 920 880 860 840 820 800 780 760 740 720 -60 -20 20 60 100 C PAR 900 180 10 Hz f 10 Tj 15 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 5 16 Typ. Coss stored energy Eoss...
Description for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
Cool MOS⑩ Power Transistor
Cool MOS??Power Transistor
Cool MOS Power Transistor
Cool MOS?/a> Power Transistor

File Size 253.54K  /  11 Page

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    DDC
Part No. BU-61580
OCR Text ....4 V V V V V V 0.200 0.860 10 Vp-p Vpeak 6 7 9 Vp-p 4.5 4.75 5.0 5.0 5.5 5.25 mA mA 20 18 27 27 10...900 1.245 1.500 2.025 0.885 1.185 1.485 2.085 1.00 1.43 1.86 2.72 2.10 2.50 2.97 3.77 1.92 2.35 2...
Description ACE Complete Integrated Bc-rt-mt Terminal

File Size 560.26K  /  44 Page

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    CA5800C CA5800CS

Motorola, Inc
Part No. CA5800C CA5800CS
OCR Text ...nal = -17 dB. See Figure 2. f = 860 MHz, Psync = 200 mW) Second Order IMD (Pt = 2.75 dBm, f1 = 373 MHz, f2 = 450 MHz, See Figure 1) IM2 -65 -60 dB MOTOROLA RF Motorola, Inc. 1994 DEVICE DATA CA5800C CA5800CS 1 ARCHIVE ...
Description The RF Line Wideband Linear Amplifiers

File Size 64.02K  /  4 Page

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    MOTOROLA[Motorola, Inc]
MOTOROLA [Motorola, Inc]
Part No. MRF373ASR1 MRF373AR1 MRF373A
OCR Text ...ns with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common s...900 f, FREQUENCY (MHz) Figure 3. Performance in Narrowband Circuit 200 C oss , C iss , CAPA...
Description MRF373AR1, MRF373ALSR1 470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS

File Size 332.33K  /  8 Page

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    MRF899

MOTOROLA[Motorola, Inc]
Part No. MRF899
OCR Text ...00 75 6W 50 25 30 0 800 820 840 860 880 900 f, FREQUENCY (MHz) VCC = 26 Vdc Icq = 300 mA 920 940 960 Pin = 30 W 24 W 18 W 900 MHz 960 MHz VCC = 26 Vdc Icq = 300 mA 25 Figure 2. Output Power versus Input Power Figure 3. Output Po...
Description RF POWER TRANSISTOR NPN SILICON

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    TDA5330T

Philips Semiconductors
NXP Semiconductors
Part No. TDA5330T
OCR Text ... -21 24 37 36 TYP. 12 - 180 470 860 11 - - - - - MAX. V MHz MHz MHz dB dBV dBm dB dB dB UNIT January 1988 2 Philips Semiconductors ...900 400 800 200 MHz kHz kHz kHz Input reflection coefficient Reverse transmission coefficient ...
Description VHF/ UHF and Hyperband mixer/oscillator for TV and VCR 3-band tuners
VHF, UHF and Hyperband mixer/oscillator for TV and VCR 3-band tuners

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