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				Excelics Semiconductor, Inc.
Part No.	EIC7785-8 EIC7785-8NH
OCR Text	8 UPDATED 08/21/2007 7.70-8.50GHz 8-Watt Internally-Matched Power FET FEATURES * * * * * * * 7.70-8.50GHz Bandwidth Input/Output Imp...10 V, IDSQ 2200mA Gain at 1dB Compression f = 7.70-8.50GHz VDS = 10 V, IDSQ 2200mA Gain Flatness f...
Description	7.70-8.50GHz 8-Watt Internally-Matched Power FET
File Size	157.30K / 4 Page	View it Online	Download Datasheet

				INTERSIL CORP Intersil, Corp. Harris, Corp. HARRIS[Harris Corporation]
Part No.	HS1-1840RH-8 HS1-1840RH-Q HS9-1840RH_SAMPLE HS1-1840RH_PROTO HS1-1840RH_SAMPLE HS-1840RH HS9-1840RH_PROTO HS9-1840RH-8 HS9-1840RH-Q HS1-1840RH/SAMPLE HS9-1840RH/SAMPLE HS1-1840RH/PROTO HS9-1840RH/PROTO
OCR Text	... NUMBER HS1-1840RH-Q HS1-1840RH-8 HS1-1840RH/Proto HS1-1840RH/Sample HS9-1840RH-Q HS9-1840RH-8 HS9-1840RH/Proto HS9-1840RH/Sample TEMP. RANG...10 10 IN 9 11 GND 12 (+5VS) VREF 13 ADDR A3 14 28 OUT 27 -VS 26 IN 8 25 IN 7 24 IN 6 23 IN 5 22 IN 4...
Description	16-CHANNEL, SGL ENDED MULTIPLEXER, CDIP28 Rad-Hard 16 Channel CMOS Analog Rad-Hard 16 Channel CMOS Analog 抗辐6通道CMOS模拟抗辐6通道CMOS模拟
File Size	191.23K / 13 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation
Part No.	MH32S72AQJA-8 MH32S72AQJA-7
OCR Text	8 17 /mar./2000 mit-ds-0371-0.2 preliminary spec. some contents are subject to change without notice. mitsubishi lsis mitsubishi electric d...10 dq7 52 cb2 94 dq39 136 cb6 11 dq8 53 cb3 95 dq40 137 cb7 12 vss 54 vss 96 vss 138 vss 13 dq9 55 d...
Description	ER 3C 3#16S SKT RECP ER 3C 3#16S PIN RECP
File Size	929.60K / 56 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	CT20TM-8
OCR Text	...TE BIPOLAR TRANSISTOR CT20TM-8 STROBE FLASHER USE CT20TM-8 OUTLINE DRAWING 10.5MAX. 5.2 Dimensions in mm 2.8 5.0 1.2 3.2 1.3MAX. 0.8 17 13.5MIN. 3.8MAX. 8.5 2.54 2.54 0.5 2.6 qwe w q q...
Description	MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
File Size	47.81K / 3 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor Powerex Power Semiconductors Mitsubishi Electric Corporation
Part No.	BCR08AS-8
OCR Text	8 low power use non-insulated type, planar passivation type ?i t (rms) ........................................................................10 65 10 ? 10 1 7 5 3 2 012 10 0 7 5 3 2 345 4 4 t j = 125? t j = 25? 10 0 23 5710 1 4 2 23 5710...
Description	LOW POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
File Size	100.77K / 5 Page	View it Online	Download Datasheet

				HYNIX SEMICONDUCTOR INC
Part No.	HYNIXSEMICONDUCTORINC-HYM71V16M655AT6-8 HYM71V16M655ALT6-8
OCR Text	...th and burst type - 1, 2, 4 or 8 or full page for sequential burst - 1, 2, 4 or 8 for interleave burst ? programmable cas latency ; 2, 3 ...10 dq35 79 nc 80 nc 11 vcc 12 vcc 81 vcc 82 vcc 13 dq4 14dq3683dq1684dq48 15 dq5 16dq3785dq1786dq49 ...
Description	16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
File Size	244.10K / 14 Page	View it Online	Download Datasheet

				http://
Part No.	B-8
OCR Text	8 series dual - in - line package (dip) tcxos features l 14/4 pin tcxo specifications output options tc = ls ttl, 1.0 to 160 mhz ac = cmos ac, 1.0 to 160 mhz hc = hcmos, 10 to 160 mhz rb = +4.0 dbm 50 ohm, 2 to 80 mhz eh ...
Description	Dual-In-Line Package (DIP) TCXOs
File Size	246.43K / 3 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EIC5964-8 EIC5964-8NH
OCR Text	8 UPDATED 08/21/2007 5.90-6.40GHz 8-Watt Internally Matched Power FET FEATURES * * * * * * * 5.90-6.40GHz Bandwidth Input/Output Imp...10.0 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at PO = 28.5 dBm SCL 10...
Description	5.90-6.40GHz 8-Watt Internally Matched Power FET
File Size	161.13K / 4 Page	View it Online	Download Datasheet

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