600v-120v pdf Datasheet P13 Full Text Search --- IC-ON-LINE


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600v-120v Datasheet PDF File

For 600v-120v Found Datasheets File :: 877 Search Time::0.829ms
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				Pan Jit International Inc.
Part No.	PJF10N60 PJP10N60
OCR Text	600V N-Channel Enhancement Mode MOSFET FEATURES * 10A , 600V, RDS(ON)=1.0@VGS=10V, ID=5.0A * * * * * * Low ON Resistance Fast Switching Lo...120V IS - Source Current (A) ID =10A 10 VGS = 0V 1 TJ = 125oC 25oC 0.1 -55o...
Description	600V N-Channel Enhancement Mode MOSFET
File Size	180.04K / 5 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT50GP60LDLG
OCR Text	600V, 50A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT(R) The POWER MOS 7(R) IGBT used in this resonant mode combi is a new generati...120V 10 8 6 4 2 0 33.5 0 20 40 60 80 100 120 140 160 180 GATE CHARGE (nC) VCE = 480V TJ = -55...
Description	Resonant Mode Combi IGBT
File Size	191.12K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SGW15N60 SGP15N60 SGP15N6008
OCR Text	...- Inverter * NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviou...120V 480V C, CAPACITANCE 100pF Coss 10V 5V Crss 0V 0nC 25nC 50nC 75...
Description	Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
File Size	332.95K / 12 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT80GA60LD40
OCR Text	600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon...120V VCE = 300V VCE = 480V TJ= 25C TJ= 125C 0 2 4 6 TJ= -55C 8 10 12 0 4 8 VCE, COLLE...
Description	High Speed PT IGBT
File Size	240.30K / 9 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT80GA60B APT80GA60S
OCR Text	600V High Speed PT IGBT -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology s...120V VCE = 300V VCE = 480V TJ= 25C TJ= 125C 0 2 4 6 TJ= -55C 8 10 12 0 4 8 VCE, COLLE...
Description	High Speed PT IGBT
File Size	209.83K / 6 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SGB04N60 SGU04N60 SGD04N60 SGP04N60
OCR Text	...- Inverter * NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviou...120V 480V C, CAPACITANCE 100pF 10V C oss 5V 10pF 0V 0nC C rss 10nC 20nC ...
Description	IGBTs & DuoPacks - 4A 600V TO 220AB IGBT IGBTs & DuoPacks - 4A 600V TO252AA SMD IGBT IGBTs & DuoPacks - 4A 600V TO263AB SMD IGBT Fast IGBT in NPT-technology
File Size	386.47K / 12 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT20GT60BRDQ1 APT20GT60BRDQ1G
OCR Text	600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT(R) The Thunderblot IGBT(R) is a new generation of high volt...120V VCE = 300V TJ = -55C 8 6 4 2 0 0 20 40 60 80 100 GATE CHARGE (nC) FIGURE 4, Gate Charge 1...
Description	Thunderbolt IGBT
File Size	426.11K / 9 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd.
Part No.	APT50GP60J
OCR Text	600v the power mos 7 ? igbt is a new generation of high voltage power igbts. using punch through technology this igbt is ideal for many hig...120v v ge = 10v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test ...
Description	POWER MOS 7 IGBT IGBT的功率MOS 7
File Size	96.47K / 6 Page	View it Online	Download Datasheet

				MICROSEMI POWER PRODUCTS GROUP ADPOW[Advanced Power Technology]
Part No.	APT100GN60B2 APT100GN60B2G B2G
OCR Text	600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's ha...120V VCE = 300V VCE = 480V 8 6 4 2 0 0 100 50 TJ = 175C 0 0 2 4 6 8 10 12 14 VGE, GATE-TO-...
Description	Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: T-MAX [B2]; BV(CES) (V): 600; VCE(sat) (V): 1.5; IC (A): 87; IGBT
File Size	393.22K / 6 Page	View it Online	Download Datasheet

				Microsemi, Corp. Advanced Power Technology
Part No.	APT150GN60JDQ4
OCR Text	600V APT150GN60JDQ4 E G C E Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are...120V VCE = 300V 8 6 4 2 0 0 200 VCE = 480V 50 0 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOL...
Description	Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 600; VCE(sat) (V): 1.4; IC (A): 123; 220 A, 600 V, N-CHANNEL IGBT
File Size	530.84K / 9 Page	View it Online	Download Datasheet

For 600v-120v Found Datasheets File :: 877 Search Time::0.829ms
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