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  54pin Datasheet PDF File

For 54pin Found Datasheets File :: 455    Search Time::2.344ms    
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    HYNIX[Hynix Semiconductor]
Part No. HY57V281620HCT-6 HY57V281620HCT-7 HY57V281620HCT-K HY57V281620HCT-8 HY57V281620HCT-P HY57V281620HCT-S HY57V281620HCT HY57V281620HCT-H HY57V281620HCLT-6 HY57V281620HCLT-7 HY57V281620HCLT-8 HY57V281620HCLT-H HY57V281620HCLT-K HY57V281620HCLT-P HY57V281620HCLT-S
OCR Text ...interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM or LDQM Internal four banks operation * * * * Auto refresh and self refresh ...
Description 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz
4 Banks x 2M x 16bits Synchronous DRAM

File Size 94.19K  /  13 Page

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    K4S560432E-TC K4S560432E-TC75 K4S561632E-TL75 K4S560432E-TL75 K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K4S560432E-TC K4S560432E-TC75 K4S561632E-TL75 K4S560432E-TL75 K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60
OCR Text ...3MHz (CL=3) 166MHz (CL=3) LVTTL 54pin TSOP(II) Interface Package Organization 64Mx4 32Mx8 16Mx16 Row Address A0~A12 A0~A12 A0~A12 Column Address A0-A9, A11 A0-A9 A0-A8 Row & Column address configuration Rev. 1.5 May 2004 S...
Description 256Mb E-die SDRAM Specification 256Mb的电子芯片内存规

File Size 194.54K  /  14 Page

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    K4S280432E K4S280432E-TL75 K4S280432E-TC75 K4S281632E-TL75 K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K4S280432E K4S280432E-TL75 K4S280432E-TC75 K4S281632E-TL75 K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60
OCR Text ...rface LVTTL LVTTL LVTTL Package 54pin TSOP 54pin TSOP 54pin TSOP Organization 32Mx4 16Mx8 8Mx16 Row Address A0~A11 A0~A11 A0~A11 Column Address A0-A9, A11 A0-A9 A0-A8 Row & Column address configuration Rev. 1.4 February. 2004...
Description 128Mb E-die SDRAM Specification 128Mb的电子芯片内存规

File Size 142.99K  /  14 Page

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    K4S280432F K4S280432F-TC75 K4S280432F-TL75 K4S281632F-TL75 K4S280832F-TC75 K4S280832F-TL75 K4S281632F-TC60 K4S281632F-TC

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K4S280432F K4S280432F-TC75 K4S280432F-TL75 K4S281632F-TL75 K4S280832F-TC75 K4S280832F-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60
OCR Text ...3MHz (CL=3) 166MHz (CL=3) LVTTL 54pin TSOP(II) Interface Package Organization 32Mx4 16Mx8 8Mx16 Row Address A0~A11 A0~A11 A0~A11 Column Address A0-A9, A11 A0-A9 A0-A8 Row & Column address configuration Rev. 1.2 May 2004 SD...
Description RES, 16.9, 1/16W, TKF, 1%, 0603
TV 11C 11#12 PIN RECP
128MB F-DIE SDRAM SPECIFICATION

File Size 140.81K  /  14 Page

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    K4S560432E-NC75 K4S560832E-NC75 K4S560832E-NL75 K4S561632E K4S560432E-NC K4S560432E-NL75

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S560432E-NC75 K4S560832E-NC75 K4S560832E-NL75 K4S561632E K4S560432E-NC K4S560432E-NL75
OCR Text 54pin sTSOP-II Revision 1.1 February. 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February, 2004 SDRAM 256Mb E-die (x4, x8 x8) Revision History Revision 1.0 (Augus...
Description 256Mb E-die SDRAM Specification 54pin sTSOP-II 256Mb的电子芯片内存规4pin sTSOP -

File Size 180.64K  /  13 Page

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    K4H510838B-NC/LA2 K4H510838B-NC/LB0 K4H510838B-NC/LB3 K4H510838B-NC/LCC K4H510838B-VC/LCC K4H510838B-VC/LB3 K4H510838B-V

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H510838B-NC/LA2 K4H510838B-NC/LB0 K4H510838B-NC/LB3 K4H510838B-NC/LCC K4H510838B-VC/LCC K4H510838B-VC/LB3 K4H510838B-VC/LA2 K4H510838B-VC/LB0 K4H510838B-N
OCR Text ...ximum burst refresh cycle : 8 * 54pin sTSOP(II)-400 (Leaded & Pb-Free(RoHS compliant)) package DDR SDRAM 2.0 Ordering Information Part No. K4H510838B-N(V)C/LCC K4H510838B-N(V)C/LB3 K4H510838B-N(V)C/LA2 K4H510838B-N(V)C/LB0 64M x 8 Or...
Description 512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) 512MB的乙芯片DDR SDRAM内存规格54 sTSOP -Ⅱ(400mil x 441mil

File Size 346.41K  /  24 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S560432A K4S560432A-TC_L75 K4S560432A-TC_L80 K4S560432A-TC_L1H K4S560432A-TC_L1L K4S560432A-TC/L80 K4S560432A-TC/L1L K4S560432A-TC/L1H K4S560432A-TC/L75
OCR Text ...100MHz(CL=2) 100MHz(CL=3) LVTTL 54pin TSOP(II) Interface Package FUNCTIONAL BLOCK DIAGRAM I/O Control LWE LDQM Data Input Register Bank Select 16M x 4 Sense AMP 16M x 4 16M x 4 16M x 4 Refresh Counter Output Buffer Row ...
Description 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM16米x 4位4银行同步DRAM LVTTL
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6米x 4位4银行同步DRAM LVTTL

File Size 126.16K  /  10 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KM416S8030BN-G/FH KM416S8030BN-G/FL
OCR Text ...s8030bn-g/fh 100mhz(cl=2) lvttl 54pin stsop(ii) km416s8030bn-g/fl 100mhz(cl=3) km416s8030bn rev. 0.1 aug. 1999 cmos sdram preliminary shrink-tsop v dd dq0 v ddq dq1 dq2 v ssq dq3 dq4 v ddq dq5 dq6 v ssq dq7 v dd ldqm we cas ras cs ba0 ba...
Description 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128MbSDRAM的收缩的TSOP 200万16 × 4银行同步DRAM LVTTL

File Size 55.29K  /  9 Page

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