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Microsemi Corporation
ADPOW[Advanced Power Technology]
Microsemi, Corp.
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| Part No. |
APT10026L2LL_03 APT10026L2LL APT10026L2LL03 APT10026L2LLG
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| OCR Text |
...
UNIT Volts
1000 0.260 100 500 100 3 5
(VGS = 10V, 19A)
Ohms A nA Volts
12-2003 050-7024 Rev B
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125C) Gate-Sou... |
| Description |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
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| File Size |
100.91K /
5 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM100DA18TG
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| OCR Text |
...C
Min 1000
Typ
Max 250 500
Unit V A A
IF = 60A IF = 120A IF = 60A IF = 60A VR = 670V di/dt = 200A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
60 1.9 2.2 1.7 280 350 760 3600
2.5 V
July, 2006 2-6 APTM100DA18TG-... |
| Description |
Boost chopper MOSFET Power Module
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| File Size |
280.11K /
6 Page |
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it Online |
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Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
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| Part No. |
R1463 R1463P
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| OCR Text |
...0
600
800
1000
10-2 500
700
1000
1500
102 2000
WAVELENGTH (nm)
SUPPLY VOLTAGE (V)
GAIN
AN
O
E
Figure 3: Typical Time Response
TPMHB0532EA
Figure 4: Typical Temperature Coefficient of Anode Se... |
| Description |
PHOTOMULTIPLIER TUBES
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| File Size |
45.31K /
4 Page |
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Crydom Corporation
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| Part No. |
CTB16
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| OCR Text |
... 0.2v 0.2v 0.2v i h max @ i t = 500 ma note 2 15ma 35ma 50ma i l max @ i g = 1.2 i gt qi-iii 25ma 50ma 70ma i l max @ i g = 1.2 i gt q-ii 30...1000v/s (dv/dt)c min @ (dv/dt)c = 0.1 v/ms note 2 tj = 125?c 8.5a/ms (dv/dt)c min @ (dv/dt)c = 10 v/... |
| Description |
Triacs
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| File Size |
92.95K /
2 Page |
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Mitsubishi Electric Corporation
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| Part No. |
QM50E3Y-2H
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| OCR Text |
...gs 1000 1000 1000 7 50 50 400 3 500 unit v v v v a a w a a absolute maximum ratings (diode part (d2), t j =25 c) symbol v rrm v rsm v r (d...1000v, v eb =2v v cb =1000v, emitter open v eb =7v i c =50a, i b =1a Ci c =50a (diode forward voltag... |
| Description |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
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| File Size |
90.57K /
6 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM100DDA35T3G
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| OCR Text |
...V, VDS = 0V
350 3
Max 100 500 420 5 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off...1000V IF = 30A IF = 60A IF = 30A IF = 30A VR = 667V di/dt=200A/s Tj = 25C Tj = 125C Tc = 70C
Min ... |
| Description |
Dual Boost chopper MOSFET Power Module
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| File Size |
288.15K /
6 Page |
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Electronic Theatre Controls, Inc.
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| Part No. |
CFR CFR-50 CFR-12
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| OCR Text |
...der 100K 100K ~ 1M 1M 350 +350 -500 -500 -700 -1500 -1500 ~ 10M
DIMENSIONS
Unit : mm STYLE Normal od H L oD CFR-12 CFR-25 CFR-50 CFR100 ...1000V 1000V 500V 1000V 1000V 500V 1000V 1000V
* Standard resistance is 1 ~10M , below or over thi... |
| Description |
Carbon Film Resistors Normal & Miniature Style
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| File Size |
39.75K /
2 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT10030L2VFR_04 APT10030L2VFR APT10030L2VFR04
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| OCR Text |
... MIN TYP MAX UNIT
10600 1000 500 585 55 265 14 16 75 14
ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time ...1000V TJ 150C
APT Reserves the right to change, without notice, the specifications and informati... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
129.11K /
4 Page |
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it Online |
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Price and Availability
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