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  452.4 Datasheet PDF File

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    VG3617161ET VG3617161ET-6 VG3617161ET-7 VG3617161ET-8

VML[Vanguard International Semiconductor]
Part No. VG3617161ET VG3617161ET-6 VG3617161ET-7 VG3617161ET-8
OCR Text ... Programmable burst length (1,2,4,8,& Full page) * Programmable wrap sequence (Sequential/Interleave) * Automatic precharge and controlled precharge * Auto refresh and self refresh modes * Dual internal banks controlled by A11(Bank select) ...
Description CMOS Synchronous Dynamic RAM

File Size 1,124.02K  /  69 Page

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    VG4632321A VG4632321AQ-45 VG4632321AQ-45R VG4632321AQ-5 VG4632321AQ-55 VG4632321AQ-55R VG4632321AQ-5R VG4632321AQ-6 VG46

VML[Vanguard International Semiconductor]
Part No. VG4632321A VG4632321AQ-45 VG4632321AQ-45R VG4632321AQ-5 VG4632321AQ-55 VG4632321AQ-55R VG4632321AQ-5R VG4632321AQ-6 VG4632321AQ-6R VG4632321AQ-7 VG4632321AQ-7R
OCR Text ...or Write burst lengths of 1, 2, 4, 8, or full page, with burst termination option. An Auto Precharge function may be enabled to provide a se...524,288x32x2-Bit CMOS Synchronous Graphic RAM CLOCK CLK BUFFER Row Decoder Column Decoder ...
Description 524,288x32x2-Bit CMOS Synchronous Graphic RAM

File Size 1,956.12K  /  81 Page

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    A29L004TL-90 A29L004L A29L004TV-90 A29L004X A29L004 A29L004TL-70 A29L004TV-70 A29L004TW-70 A29L004TW-90 A29L004TX-70 A29

AMICC[AMIC Technology]
Part No. A29L004TL-90 A29L004L A29L004TV-90 A29L004X A29L004 A29L004TL-70 A29L004TV-70 A29L004TW-70 A29L004TW-90 A29L004TX-70 A29L004TX-90 A29L004UL-70 A29L004UL-90 A29L004UV-70 A29L004UV-90 A29L004UW-70 A29L004UW-90 A29L004UX-70 A29L004UX-90 A29L004V A29L004W
OCR Text ...es: - 70/90 (max.) n Current: - 4 mA typical active read current - 20 mA typical program/erase current - 200 nA typical CMOS standby - 200 n...524,288 bytes of 8 bits. The 8 bits of data appear on I/O0 - I/O7. The A29L004 is offered in 40-pin ...
Description 512K X 8 Bit CMOS 3.0 Volt-only/ Boot Sector Flash Memory
512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory
512K X 8 Bit CMOS 3.0 Volt-only Boot Sector Flash Memory

File Size 367.91K  /  39 Page

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    IXFTN100 IXFX15N100 IXFH14N100 IXFHN100 IXFX14N100 IXFT14N100 IXFT15N100

IXYS, Corp.
IXYS[IXYS Corporation]
Part No. IXFTN100 IXFX15N100 IXFH14N100 IXFHN100 IXFX14N100 IXFT14N100 IXFT15N100
OCR Text ...cified) min. typ. max. 1000 2.5 4.5 100 TJ = 25C TJ = 125C 250 1 0.75 0.70 V V nA mA mA W W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ...524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Millimeter Min. Max....
Description HiPerFET Power MOSFETs 14 A, 1000 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 115.80K  /  4 Page

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    K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V62C5181024LL-70P K4S643232C K4S643232C-TC10 K4S643232C-TC55 K4S643232C-

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V62C5181024LL-70P K4S643232C K4S643232C-TC10 K4S643232C-TC55 K4S643232C-TC60 K4S643232C-TC80 K4S643232C-TL10 K4S643232C-TL60 K4S643232C-TL80 K4S643232C-TC_L10 K4S643232C-TC_L55 K4S643232C-TC_L60 K4S643232C-TC_L70 K4S643232C-TC_L80 K4S643232C-TC/L10 K4S643232C-TC/L55 K4S643232C-TC/L60 K4S643232C-TC/L70 K4S643232C-TC/L80
OCR Text 4 Banks Synchronous DRAM LVTTL Revision 1.1 November 1999 Samsung Electronics reserves the right to change products or specification w...524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous des...
Description 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

File Size 1,151.85K  /  43 Page

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    K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4S643232E-TC70 K4S643232E K4S643232E-TC45 K4S643232E-TC50 K4S643232E-TC

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4S643232E-TC70 K4S643232E K4S643232E-TC45 K4S643232E-TC50 K4S643232E-TC55 K4S643232E-TC60 K4S643232E-TL50 K4S643232E-TL60 K4S643232E-TC/L/E/N/I/P
OCR Text 4 Banks Synchronous DRAM LVTTL Revision 1.3 October 2001 Samsung Electronics reserves the right to change products or specification wi...524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous des...
Description 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet

File Size 100.95K  /  12 Page

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    K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643232E-TE60 K4S643232E-TE70 K4S643232E-TN50 K4S643232E-TN60 K4S643232E

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643232E-TE60 K4S643232E-TE70 K4S643232E-TN50 K4S643232E-TN60 K4S643232E
OCR Text 4 Banks Synchronous DRAM LVTTL(3.3V) Extended Temperature 86-TSOP Revision 1.4 December 2001 Samsung Electronics reserves the right to...524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous des...
Description LED ORANGE DIFFUSED 2X5 RECT 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3
LED ORANGE DIFFUSED 2X5 RECT
CONNECTOR ACCESSORY
LED ORG/RED DIFFUSED 2X5MM RECT
-2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)

File Size 99.80K  /  12 Page

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    K4S643232E-TP60 K4S643232E-TP70 K4S643232E-TI K4S643232E-TI60 K4S643232E-TI70

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S643232E-TP60 K4S643232E-TP70 K4S643232E-TI K4S643232E-TI60 K4S643232E-TI70
OCR Text 4 Banks Synchronous DRAM LVTTL Industrial Temperature Revision 1.2 October 2001 Samsung Electronics reserves the right to change produ...524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous des...
Description 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
CONNECTOR ACCESSORY
IR LED 880NM 40 DEG SIDE VIEW

File Size 98.65K  /  12 Page

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    K4S643232F-TL45 K4S643232F-TL55 K4S643232F-TL70 K4S643232F-TC70 K4S643232F-TC60 K4S643232F K4S643232F-TC45 K4S643232F-TC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S643232F-TL45 K4S643232F-TL55 K4S643232F-TL70 K4S643232F-TC70 K4S643232F-TC60 K4S643232F K4S643232F-TC45 K4S643232F-TC50 K4S643232F-TC55 K4S643232F-TL50 K4S643232F-TL60
OCR Text 4 Banks Synchronous DRAM LVTTL Revision 1.0 January 2002 Samsung Electronics reserves the right to change products or specification wi...524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous des...
Description IR LED 950NM 18 DEG DOUBLE END
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL

File Size 100.27K  /  12 Page

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    K4S643232F-TP60 K4S643232F-TP70 K4S643232F- K4S643232F-TI60 K4S643232F-TI70

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S643232F-TP60 K4S643232F-TP70 K4S643232F- K4S643232F-TI60 K4S643232F-TI70
OCR Text 4 Banks Synchronous DRAM LVTTL(3.3V) Industrial Temperature 86-TSOP Revision 1.0 January 2002 Samsung Electronics reserves the right t...524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous des...
Description    2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
-2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
CONNECTOR ACCESSORY
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3V

File Size 98.11K  /  12 Page

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