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  400v 20a Datasheet PDF File

For 400v 20a Found Datasheets File :: 1187    Search Time::1.156ms    
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    IKA10N60T

INFINEON[Infineon Technologies AG]
Part No. IKA10N60T
OCR Text ...rn off safe operating area VCE 400v, Tj 150C Diode forward current, limited by Tjmax TC = 25C TC = 100C Diode pulsed current, tp limited b...20a 15A 10A 5A 0A 10H z T C =80C T C =110C 10A IC, COLLECTOR CURRENT IC, COLLECTOR CU...
Description 600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
From old datasheet system

File Size 364.19K  /  13 Page

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    IKP10N60T IKB10N60T

INFINEON[Infineon Technologies AG]
Part No. IKP10N60T IKB10N60T
OCR Text ...+175 V s W C VGE = 15V, VCC 400v, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature 1) Allowe...20a 15A 10A 5A 0A 10H z T C =80C 10A 5s 20s IC, COLLECTOR CURRENT T C =110C IC, COLLE...
Description Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
From old datasheet system

File Size 392.39K  /  14 Page

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    IRGIB10B60KD1 IRGIB10B60KD1P IRGIB10B60KD1PBF

IRF[International Rectifier]
Part No. IRGIB10B60KD1 IRGIB10B60KD1P IRGIB10B60KD1PBF
OCR Text ...C Conditions IC = 10A VCC = 400v VGE = 15V IC = 10A, VCC = 400v VGE = 15V, RG = 50, L = 1.07mH Ls= 150nH, TJ = 25C IC = 10A, VCC = 400v ...20a 12 10 8 6 4 2 0 5 10 VGE (V) 15 20 5 10 VGE (V) 15 20 ICE = 5.0A ICE = 10A ICE = 20a 12 10 8 ...
Description 600V Low-Vceon Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 383.42K  /  12 Page

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    SKP10N60A SKB10N60A SKW10N60A

Infineon Technologies AG
Part No. SKP10N60A SKB10N60A SKW10N60A
OCR Text ...uency (Tj 150C, D = 0.5, VCE = 400v, VGE = 0/+15V, RG = 25) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 120W 25A 100W 20a Ptot, POWER DISSIPATION 80W IC, COLLECTOR CURRENT ...
Description Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode
IGBTs & DuoPacks - 10A 600V TO220aB IGBT Diode
IGBTs & DuoPacks - 10A 600V TO247AC IGBT Diode
IGBTs & DuoPacks - 10A 600V TO263AB SMD IGBT Diode

File Size 437.79K  /  14 Page

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    FGH40N60UF FGH40N60UFTU

Fairchild Semiconductor, Corp.
Part No. FGH40N60UF FGH40N60UFTU
OCR Text ... Gate to Collector Charge VCE = 400v, IC = 40A, VGE = 15V VCC = 400v, IC = 40A, RG = 10, VGE = 15V, Inductive Load, TC = 125oC VCC = 400v, I...20a 80A 1.5 IC = 20a 4 1.0 25 50 75 100 125 o Collector-EmitterCase Temperature, TC [...
Description 600V, 40A Field Stop IGBT; Package: TO-247; No of Pins: 3; Container: Rail 80 A, 600 V, N-CHANNEL IGBT, TO-247AB

File Size 702.43K  /  8 Page

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    FDA20N500707 FDA20N50F109

Fairchild Semiconductor
Part No. FDA20N500707 FDA20N50F109
OCR Text ... 25C VDS = 500V, VGS = 0V VDS = 400v, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 11A VDS = 40V,...20a VGS = 10V (Note 4, 5) (Note 4, 5) VDD = 250V, ID = 20a RG = 25 -------- 95 375 100 105...
Description 500V N-Channel MOSFET

File Size 736.66K  /  9 Page

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    2SC3994 0418 2SC39941 EN2828

Sanyo Semicon Device
Part No. 2SC3994 0418 2SC39941 EN2828
OCR Text ...2=-2.4A, L=50H, clamped ton VCC=400v, 5IB1=-2.5IB2=IC=20a, RL=20 tstg tf VCC=400v, 5IB1=-2.5IB2=IC=20a, RL=20 VCC=400v, 5IB1=-2.5IB2=IC=20a, RL=20 Switching Time Test Circuit No.2828-2/4 2SC3994 No.2828-3/4 2SC3994 Specifi...
Description NPN Triple Diffused Planar Silicon Transistor 800V/25A Switching Regulator Applications
From old datasheet system

File Size 98.21K  /  4 Page

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    FDA20N50F

Fairchild Semiconductor
Part No. FDA20N50F
OCR Text ... 250A, Referenced to 25 C VDS = 400v, TC = 125oC VGS = 30V, VDS = 0V VDS = 500V, VGS = 0V o 500 - 0.6 - 10 100 100 V V/oC A nA ...20a VGS = 10V VDS = 25V, VGS = 0V f = 1MHz (Note 4, 5) 2550 350 27 50 14 20 3390 465 40 65 - ...
Description N-Channel MOSFET 500V, 22A, 0.26Ω
N-Channel MOSFET 500V, 22A, 0.26ヘ

File Size 562.29K  /  8 Page

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    Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T

INFINEON[Infineon Technologies AG]
Part No. Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T
OCR Text ... 260 V s W C VGE = 15V, VCC 400v, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering tempe...20a 10A 0A 100H z T C =110C T C =80C 10A 50s Ic 1A DC 1ms 10ms Ic 1kH z 10kH z 100kH...
Description 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY

File Size 375.15K  /  12 Page

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    SIEMENS AG
Part No. SKA06N60
OCR Text ...g energy e ts t j =25 c, v cc =400v, i c =6a, v ge =0/15v, r g =50 ? , energy losses include ? tail ? and diode reverse recovery. - 0.215 ...20a 30a t c =110 c t c =80 c i c , collector current 1v 10v 100v 1000v 0.1a 1a 10a t p =2 s 15 ...
Description Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT)

File Size 235.00K  /  13 Page

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For 400v 20a Found Datasheets File :: 1187    Search Time::1.156ms    
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