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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RA60H1317M_06 RA60H1317M RA60H1317M-101 RA60H1317M06
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| OCR Text |
...DD=12.5V, VGG=0V) * Pout>60W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW * Broadband Frequency Range: 135-175MHz * Low-Power Control Current IGG=1m...channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) ... |
| Description |
RoHS Compliance ,135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO
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| File Size |
87.86K /
8 Page |
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Quanzhou Jinmei Electronic ...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD00HVS1 RD00HVS1-15
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| OCR Text |
...ATINGS 30 +/-10 3.1 20 200 150 -40 to +125 40 UNIT V V W mW mA
C C C/W
Note : Above parameters are guaranteed independently.
ELECTRIC...CHANNEL DISSIPATION Pch(W) 3 2 1
On PCB(*1)
0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C)
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| Description |
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
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| File Size |
141.85K /
6 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD06HHF1
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| OCR Text |
.../- 20 V 27.8 W 0.3 W 3 A C 150 -40 to +150 C C/W 4.5
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS...CHANNEL DISSIPATION Pch(W) 40
20 10 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C)
Ids(A)
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| Description |
Silicon MOSFET Power Transistor 30MHz,6W
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| File Size |
197.08K /
7 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD06HVF1-101 RD06HVF1
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| OCR Text |
...7.8 W Zg=Zl=50 0.6 W 3 A C 150 -40 to +150 C C/W junction to case 4.5
Note 1: Above parameters are guaranteed independently.
ELECTRICA...CHANNEL DISSIPATION Pch(W) 40
20 10 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C)
Ids(A)
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| Description |
MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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| File Size |
374.92K /
8 Page |
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it Online |
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Freescale
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| Part No. |
MC4620
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| OCR Text |
...s (v) r ds(on) m( ? )i d (a) 40 @ v gs = 4.5v 6.0 31 @ v gs = 10v 6.9 80 @ v gs = -4.5v -4.2 52 @ v gs = -10v -5.2 30 product summary -30 p & n-channel 30-v (d-s) mosfet ?low r ds(on) provides higher efficiency and extends battery l... |
| Description |
P & N-Channel 30-V (D-S) MOSFET
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| File Size |
346.18K /
7 Page |
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it Online |
Download Datasheet |
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Quanzhou Jinmei Electro...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD15HVF1 RD15HVF1-15
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| OCR Text |
...S 30 +/-20 48 1.5(Note2) 4 150 -40 to +150 2.6
Note 1: Above parameters are guaranteed independently. Note 2: Over 300MHz use spec is 6W
...CHANNEL DISSIPATION Pch(W) 80
40 20 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C)
Ids(A)
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| Description |
Silicon MOSFET Power Transistor, 175MHz520MHz,15W
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| File Size |
363.09K /
9 Page |
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it Online |
Download Datasheet |
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