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  4.900v Datasheet PDF File

For 4.900v Found Datasheets File :: 1765    Search Time::1.281ms    
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    Eupec
Part No. BSM300GB120DLC
OCR Text ... = 25C VGE(th) VCE sat min. 4,5 typ. 2,1 2,4 5,5 max. 2,6 2,9 6,5 V V V VGE = -15V...+15V QG - 3,2 - C f = ...900V, V CEmax=VCES -LCE *di/dt Anschlusse / terminals 2-3 ISC LCE 1800 25 A nH Eoff 36 mJ Eon 35 mJ ...
Description TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2KV V(BR)CES,625A I(C)

File Size 172.18K  /  9 Page

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    FQA9N90

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FQA9N90
OCR Text ...e 1) FQA9N90 900 8.6 5.45 34.4 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/...
Description 900V N-Channel MOSFET 8.6 A, 900 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 677.85K  /  8 Page

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    SSH6N90A

Fairchild Semiconductor Corporation
Part No. SSH6N90A
OCR Text ...2.0 -----------------1.10 ------4.28 --3.5 100 -100 25 250 2.3 -A pF V V nA Test Condition VGS=0V,ID=250A See Fig 7 VDS=5V,ID=250A VGS=30V VGS=-30V VDS=900V VDS=720V,TC=125 C VGS=10V,ID=3A VDS=50V,ID=3A 4 O* 4 O V/ C ID=250A 156...
Description Advanced Power MOSFET

File Size 259.64K  /  7 Page

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    2SC3973 2SC3973A

PANASONIC[Panasonic Semiconductor]
Part No. 2SC3973 2SC3973A
OCR Text ...Unit: mm 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 s Features q q q q q H...900V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 4A IC = 4A, IB = ...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.68K  /  3 Page

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    2SK2674

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SK2674
OCR Text ... 10 8 100C 150C 6 4 2 VDS = 25V TYP 0 5 10 15 20 0 Gate-Source Voltage VGS [V] 2SK2674 100 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] 10 ID = 3.5A 1 ...
Description HVX-2 Series Power MOSFET(900V 7A)

File Size 418.26K  /  12 Page

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    SSP6N90A

Fairchild Semiconductor
Part No. SSP6N90A
OCR Text ...2.0 -----------------1.10 ------4.28 --3.5 100 -100 25 250 2.3 -A pF V V nA Test Condition VGS=0V,ID=250A See Fig 7 VDS=5V,ID=250A VGS=30V VGS=-30V VDS=900V VDS=720V,TC=125 C VGS=10V,ID=3A VDS=50V,ID=3A 4 O* 4 O V/ C ID=250A 156...
Description Advanced Power MOSFET

File Size 257.16K  /  7 Page

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    BSM300GAL120DLC

Siemens Semiconductor Group
Part No. BSM300GAL120DLC
OCR Text ... = 25C VGE(th) VCE sat min. 4,5 typ. 2,1 2,4 5,5 max. 2,6 2,9 6,5 V V V VGE = -15V...+15V QG - 3,2 - C f = ...900V, VCEmax=VCES -LsCE *dI/dt ISC LsCE 1800 25 A nH Eoff 36 mWs Eon 35 mWs tf 0,04 0,05 s s td,off ...
Description IGBT-Module

File Size 86.90K  /  9 Page

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    FS5KM-18A

Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FS5KM-18A
OCR Text ....15 2.54 0.25 2.54 0.25 4.5 0.2 q GATE w DRAIN e SOURCE 123 2.6 0.2 w VDSS ................................................................................ 900V rDS (ON) (MAX) ................................................
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 49.53K  /  4 Page

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