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CREE POWER
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| Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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| OCR Text |
...1 layer 2 = 2 layer 3 = 3 layer 4 = 4 layer 5 = 5 layer 0 = no epitaxy s = standard sic epitaxy t = thick sic epitaxy 0 = single side polish...lines, and are judged in terms of area percent under diffuse illumination. scratches a scratch is de... |
| Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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| File Size |
273.34K /
17 Page |
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Atmel
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| Part No. |
ATMEGA169V-8MI
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| OCR Text |
...terface peripheral features ? 4 x 25 segment lcd driver ? two 8-bit timer/counters with se parate prescaler and compare mode ? one 16-bit ...lines ? 64-lead tqfp and 64-pad mlf speed grade: ? atmega169v: 0 - 4 mhz @ 1.8 - 5.5v, 0 - 8 mhz @... |
| Description |
8-bit microcontroller with 16K bytes In-system programmable flash. Speed 8 MHz. Power supply 1.8 - 5.5 V.
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| File Size |
2,665.19K /
365 Page |
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it Online |
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ST Microelectronics
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| Part No. |
EMIF04-EAR02M8
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| OCR Text |
4-line ipad? emi filter a nd esd protecti on for headset features lead-free package high attenuation: -30 db at 900 mhz low cut-off frequencies: 60 mhz for speaker lines high current capability: 50 ma per line very low pcb space consu... |
| Description |
2-line EMI filter for earphones 2-line EMI filter for microphones
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| File Size |
415.28K /
12 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STE2004DIE2
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| OCR Text |
... (read and write) 3-lines and 4-lines spi interface (read and write) 3-lines 9 bit serial interface (read and write) fully integrated oscillator requires no external components cmos compatible inputs fully integrated configurable l... |
| Description |
102 X 65 SINGLE CHIP LCD CONTROLLER/DRIVER
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| File Size |
578.60K /
66 Page |
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ST Microelectronics
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| Part No. |
DSILC6-4F2 DSILC6-4P6
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| OCR Text |
...features diode array topology 4 line protection 5 v v cc protection very low capacitance: 1 pf typ. lead-free pacakge rohs compliant benefits very low capacitance between lines to gnd for optimized data integrity low pcb space con... |
| Description |
ESD Protection for high speed interface
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| File Size |
338.25K /
11 Page |
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it Online |
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Price and Availability
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