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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGF0915A
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OCR Text |
...6 30.92 32.93 34.72 36.22 37.37 38.13 38.46 38.33 37.72 36.59 34.92 32.68 29.84 26.34 22.15 17.18 11.37 4.61 -3.21 -12.23 -22.60 -34.51 -48....9.76 9.23 8.90 8.65 8.38 8.06 7.75 7.43 7.36 8.18 7.75 7.31 6.86 6.36 5.75 5.26 4.77 4.21
Gate Ma... |
Description |
L & S BAND GaAs FET[ SMD non - matched ]
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File Size |
1,309.44K /
48 Page |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGF0913A
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OCR Text |
...38.53 123.05 104.53 83.65 61.24 38.21 15.46 -6.26 -26.32 -44.27 -59.90 -73.16 -84.19 -93.24 -100.63 -106.66 -111.48 -115.02 -116.79
(Ta=2...9.28 -16.17 -23.85 -32.41 -41.99 -52.79 -65.01 -78.79 -94.17 -110.98 -128.75 -146.58 -163.02 -175.89... |
Description |
L & S BAND GaAs FET [ SMD non - matched ]
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File Size |
43.80K /
4 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGF0912A
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OCR Text |
...High power added efficiency add=38%(TYP.) @f=1.9GHz,Pin=33dBm * Hermetic Package
A
O2.2
0.6*}0.2 B
A
APPLICATION
* For L/S B...9.0*}0.2 14.0
(Ta=25C)
0.65
Delivery
Tray
1.650.1
RECOMMENDED BIAS CONDITIONS
5.0... |
Description |
L & S BAND GaAs FET
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File Size |
24.00K /
3 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGF0910A_1 MGF0910A MGF0910A1
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OCR Text |
....3GHz 10 - - Limits Typ - 1.5 - 38 11 45 - Max 5.0 - -5 - - - 5.5 Unit A S V dBm dB % C/W
Linear power gain *2 Power added efficiency at ...9 dB 13 12 11 PO 10 39
GLP,P1dB, ID and add vs. VDS (f=2.3GHz)
ID=1.3A GLP
P1dB 30 37 50 40 3... |
Description |
L, S BAND POWER GaAs FET
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File Size |
176.99K /
4 Page |
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it Online |
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Price and Availability
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