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384238 2N5191G F1010 LC3564RM 08140 D4448 946903 1D471K
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  350-mhz Datasheet PDF File

For 350-mhz Found Datasheets File :: 30456    Search Time::1.422ms    
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    2SA1310

Panasonic Semiconductor
Part No. 2SA1310
OCR Text ... Collector current IC (mA) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 -70 IB=-200A -60 -50 -40 -30 -20 -10 0 0 -2 -4...MHz) -10 -30 -100 280 240 200 160 120 80 40 300 -25C - 0.3 25C - 0.1 Ta=75C 200 ...
Description Silicon PNP epitaxial planer type

File Size 36.47K  /  2 Page

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    2SD2137A 2SB1417 2SB1417A 2SD2137

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD2137A 2SB1417 2SB1417A 2SD2137
OCR Text ...50.2 18.00.5 Solder Dip 0.350.1 0.650.1 1.050.1 0.550.1 0.550.1 emitter voltage 2SB1417A Emitter to base voltage Peak collector ...MHz s s s 250 min typ max -100 -100 -100 -100 -100 Unit A A A V Forward current transfer ratio Ba...
Description Silicon PNP epitaxial planar type(For power amplification) 3 A, 80 V, PNP, Si, POWER TRANSISTOR

File Size 53.34K  /  3 Page

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    2SD2137 2SD2137A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2137 2SD2137A
OCR Text ...0 Unit V 18.00.5 Solder Dip 0.350.1 5.00.1 10.00.2 1.0 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to ...MHz s s s 250 min typ max 100 100 100 100 100 Unit A A A V Forward current transfer ratio Base to...
Description Silicon NPN triple diffusion planar type(For power amplification)

File Size 52.93K  /  3 Page

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    2SD2138A 2SB1418 2SB1418A 2SD2138

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2138A 2SB1418 2SB1418A 2SD2138
OCR Text ...CEO VEBO ICP IC PC Tj Tstg 0.350.1 0.650.1 1.050.1 0.550.1 0.550.1 C1.0 123 emitter voltage 2SB1418A Emitter to base voltage ...MHz s s min typ max -100 -100 -100 -100 -100 Unit A A A V Forward current transfer ratio Base to ...
Description Silicon PNP epitaxial planar type Darlington(For power amplification)

File Size 59.81K  /  2 Page

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    2SD2138 2SD2138A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2138 2SD2138A
OCR Text ...8A 2SD2138 C1.0 2.250.2 0.350.1 0.650.1 1.050.1 0.550.1 0.550.1 Collector to base voltage Collector to C1.0 emitter voltag...MHz s s Rank classification Q P 2000 to 5000 4000 to 10000 Rank hFE2 1 Power Transistor...
Description Silicon NPN triple diffusion planar type Darlington(For power amplification)

File Size 59.65K  /  2 Page

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    2SD2139

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2139
OCR Text ...PC Tj Tstg C1.0 2.250.2 0.350.1 0.650.1 1.050.1 0.550.1 0.550.1 C1.0 123 2.50.2 2.50.2 1:Base 2:Collector 3:Emitter ...MHz *h FE Rank classification Q P O Rank hFE 500 to 1000 800 to 1500 1200 to 2500 ...
Description Silicon NPN triple diffusion planar type(For high-current amplification ratio, power amplification)

File Size 49.15K  /  3 Page

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    2SJ361

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ361
OCR Text ...-- -- 0.28 0.85 0.3 3.2 130 0.6 350 1650 7280 6950 -1.0 530 Max -- -- 10 -10 -1.5 0.4 1.5 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S p...MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on...
Description Silicon P-Channel MOS FET

File Size 42.04K  /  9 Page

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    2SJ387 2SJ387L 2SJ387S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ387 2SJ387L 2SJ387S
OCR Text ....05 0.07 12 1170 860 310 20 325 350 425 -1.0 240 Max -- -- 10 -100 -1.5 0.07 0.1 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF n...MHz I D = -5 A VGS = -4 V RL = 2 Zero gate voltage drain current I DSS Gate to source cutoff vol...
Description Silicon P-Channel MOS FET

File Size 46.71K  /  10 Page

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    2SJ494 D11266EJ2V0DS00

NEC[NEC]
Part No. 2SJ494 D11266EJ2V0DS00
OCR Text ...VDD = -30 V RG = 10 : 2360 1060 350 25 160 310 240 74 12 16 1.0 130 290 1.5 -1.0 8.0 MIN. TYP. 39 61 -1.5 15 -10 +10 MAX. 50 88 -2.0 UNIT m:...MHz Ciss 1 000 Coss Crss 100 td(on) VDD = -30 V VGS = -10 V RG = 10 -10 -100 10 -0.1...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 68.73K  /  8 Page

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    2SJ533

HITACHI[Hitachi Semiconductor]
Part No. 2SJ533
OCR Text ...8 0.038 25 2500 1300 300 25 150 350 220 -0.95 100 Max -- -- -10 10 -2.0 0.037 0.055 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF p...MHz Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) 200 100 50 ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.60K  /  9 Page

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