|
|
 |
Advanced Power Electronics
|
Part No. |
AP09N70I-A-HF
|
OCR Text |
...ermal resistance, junction-case 3 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data & specifications subject to change wit...9a - 44 - nc q gs gate-source charge v ds =480v - 11 - nc q gd gate-drain ("miller") charge v gs =10... |
Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
File Size |
122.63K /
4 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Kersemi Electronic Co., Ltd. Kersemi Electronic Co.,...
|
Part No. |
IRFR/U9120N IRFR9120NTRR
|
OCR Text |
...its r q jc junction-to-case CCC 3.1 r q ja junction-to-ambient (pcb mount)** CCC 50 c/w r q ja junction-to-ambient CCC 110 thermal resistanc...9a, v gs = 0v ? t rr reverse recovery time CCC 100 150 ns t j = 25c, i f = -4.0a q rr reverse re... |
Description |
HEXFET Power MOSFET
|
File Size |
3,878.25K /
10 Page |
View
it Online |
Download Datasheet
|
|
|
 |
ShenZhen FreesCale Electronics. Co., Ltd
|
Part No. |
AO4700
|
OCR Text |
... identical. g s a a d d k k 1 2 3 4 8 7 6 5 soic-8 a k g d s n-channel enhancement mode field effect transistor with schottky diode gen...9a gate drain charge reverse transfer capacitance turn-on rise time turn-off delaytime gate resistan... |
Description |
N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
|
File Size |
334.30K /
5 Page |
View
it Online |
Download Datasheet
|
|
|
 |
TY Semiconductor Co., Ltd
|
Part No. |
KRF7338
|
OCR Text |
...rrent,v gs @10v , t a =25 i d 6.3 -3.0 continuous drain current ,v gs @10v , t a =70 i d 5.2 -2.5 pulsed drain current *1 i dm 26 -13 power ...9a*1 0.150 v gs = -2.7v, i d = -1.5a*1 0.200 v ds =v gs ,i d = 250 a n-ch 0.6 1.5 v ds =v gs ,i d = ... |
Description |
Ultra Low On-Resistance Dual N and P Channel MOSFET Available in Tape & Reel
|
File Size |
998.56K /
3 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|