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RFMD[RF Micro Devices]
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| Part No. |
RF2103PPCBA RF2103P
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| OCR Text |
...eq=915MHz
450 to 1000 +28.8 +26.5 -24 -30 <-125 50 <2:1 18+j0
MHz dBm dBm dBc dBc dBm/Hz
VCC =7.5V VCC =5.8V Without external second harmonic trap
Nominal 5.8V Configuration
Linear Power Gain Saturated CW Output Power IM3 ... |
| Description |
MEDIUM POWER LINEAR AMPLIFIER
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| File Size |
190.80K /
10 Page |
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Download Datasheet
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RFMD[RF Micro Devices]
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| Part No. |
RF2043 RF2043PCBA
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| OCR Text |
... Temperature ICC = 70 mA
-40 C 26 C
20.00 19.00 18.00 17.00 16.00 15.00 14.00 13.00
Output P1dB versus Frequency Across Temperature ICC = 70 mA
- 40 C 26 C 85 C
12.00
85 C
Gain (dB)
11.00
10.00
Output Power (dBm)
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| Description |
GENERAL PURPOSE AMPLIFIER
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| File Size |
67.35K /
6 Page |
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it Online |
Download Datasheet |
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NEC[NEC]
NEC, Corp.
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| Part No. |
2SC4187 2SC4187R6C 2SC4187-T1 2SC4187-T2
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| OCR Text |
... -34.2 -33.8 -33.8 -33.5 -30.4 -26.7 -25.1 -24.3 -22.7 -19.7 -15.5 MAG 5.286 4.385 3.568 3.016 2.571 2.284 2.057 1.884 1.689 1.554 1.449 1.3...664 0.654 0.653 0.643 0.629 0.616 S22 ANG -7.2 -10.7 -13.9 -13.9 -14.0 -14.7 -14.7 -16.8 -18.0 -21.3... |
| Description |
Silicon transistor
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 8V的五（巴西）总裁| 5mA的一（c）|的SOT - 323
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| File Size |
41.95K /
6 Page |
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it Online |
Download Datasheet |
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SEME-LAB[Seme LAB]
TT electronics Semelab Limited
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| Part No. |
BUL49A
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| OCR Text |
26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls.
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
* * * ...664)
TO3
Pin 1 - Base Pin 2 - Emitter Case is Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
16.28K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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