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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
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| Part No. |
FQU8P10 FQD8P10 FQD8P10TF FQD8P10TM FQU8P10TU
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| OCR Text |
...
FQD8P10 / FQU8P10 -100 -6.6 -4.2 -26.4 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/C C C
Gate-Source ...2mH, IAS = -6.6A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -8.0A, di/dt 300A/s, VDD BVDSS, ... |
| Description |
100V P-Channel QFET
100V P-Channel MOSFET 6.6 A, 100 V, 0.53 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
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| File Size |
659.70K /
9 Page |
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SANYO
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| Part No. |
2SC3752
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| OCR Text |
...300s, Duty Cycle10%
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML
Conditions
Ratings 1100 800 7 3 10 1.5 30 150 -55 to +150
...2mH, Clamped ton VCC=400V, 5IB1=-2.5IB2=IC=2A, RL=200 tstg VCC=400V, 5IB1=-2.5IB2=IC=2A, RL=200 tf V... |
| Description |
NPN Triple Diffused Planar Silicon Transistor 800V/3A Switching Regulator Applications
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| File Size |
107.02K /
5 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQP6N60C FQPF6N60C
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| OCR Text |
...* * * * * 5.5A, 600V, RDS(on) = 2.0 @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 7 pF) Fast switching 100% avalanche test...2mH, IAS = 5.5 A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 5.5A, di/dt 200A/s, VDD BVDSS, St... |
| Description |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
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| File Size |
908.83K /
10 Page |
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Download Datasheet |
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Hangzhou Silan Microelectronics
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| Part No. |
UTC2003
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| OCR Text |
...ECTION
1 Non inverting input 2 Inverting input 3 Ground 4 Output
5 Supply Voltage
w
w
w
t a .D
S a
e h
U t4 e
VA...2mH From Supply Voltage 3000F 16V
B
To Pin 5
14.4 t t2=1000ms
Short Circuit (AC and DC Con... |
| Description |
10W Car Radio Audio Amplifier
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| File Size |
127.37K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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