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  2110.0 Datasheet PDF File

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    B39212B7936P810

TDK Electronics
Part No. B39212B7936P810
OCR Text ...0 ... 1980.0 mhz 40.0 46.0 - db 2110.0 ... 2155.0 mhz 50.0 61.0 - db 2400.0 ... 2500.0 mhz 38.0 41.0 - db 3420.0 ... 3510.0 mhz 40.0 45.0 - db 4220.0 ... 4310.0 mhz 35.0 45.0 - db 5130.0 ... 5265.0 mhz 35.0 43.0 - db 4 september 19, 201...
Description    SAW Components SAW Duplexer

File Size 221.32K  /  12 Page

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    NXP Semiconductors N.V.
Part No. BLD6G22LS-50112 BLD6G22L-50112
OCR Text 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 3 -- 17 August 2010 Product data sheet 1. Product profile 1.1 General des...0.01 % probability on CCDF; carrier spacing 5 MHz. IDq = 170 mA (main); VGS(amp)peak = 0 V. CAUTI...
Description W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor

File Size 155.65K  /  15 Page

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    WJ Communication
Part No. AH115
OCR Text ...Frequency 0 -5 -10 -15 -20 -25 2110 +25C +85C S22 (dB) S22 vs. Frequency 0 -5 -10 -15 -20 -25 2110 +25C +85C -40C 2120 2130 2140 2150 2160 2170 12 10 8 6 2110 +25C +85C -40C 2120 2130 2140 2150 2160 2170 -40C 2120 2130 ...
Description High Linearity InGaP HBT Amplifier

File Size 452.49K  /  5 Page

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    MAPLST2122-015CF

Tyco Electronics
Part No. MAPLST2122-015CF
OCR Text 2110 -- 2170 MHz, 15W, 28V 8/20/03 Preliminary MAPLST2122-015CF Features Designed for W-CDMA base station applications in the 2...0 Vdc, ID = 20 Adc) CHARACTERISTICS Zero Gate Voltage Drain Leakage Current 28 (VDS = 65 Vdc, VGS = ...
Description RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V

File Size 234.56K  /  5 Page

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    MAPLST2122-030CF

Tyco Electronics
Part No. MAPLST2122-030CF
OCR Text 2110 -- 2170 MHz, 30W, 28V 4/6/2005 Preliminary MAPLST2122-030CF Features Designed for W-CDMA base station applications in the ...0 Vdc, ID = 20 Adc) CHARACTERISTICS Zero Gate Voltage Drain Leakage Current 28 (VDS = 65 Vdc, VGS = ...
Description RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 30W, 28V

File Size 158.31K  /  5 Page

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    MAPLST2122-060CF

Tyco Electronics
Part No. MAPLST2122-060CF
OCR Text 2110 -- 2170 MHz, 60W, 28V 4/6/2005 Preliminary MAPLST2122-060CF Features Designed for W-CDMA base station applications in the ...0 Unit C/W NOTE--CAUTION--MOS devices are susceptible to damage from electrostatic charge. Precau...
Description RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V

File Size 168.31K  /  5 Page

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    MAPLST2122-090CF

Tyco Electronics
Part No. MAPLST2122-090CF
OCR Text 2110 -- 2170 MHz, 90W, 28V 4/6/2005 Preliminary MAPLST2122-090CF Features Designed for W-CDMA base station applications in the ...0.85 Unit C/W NOTE--CAUTION--MOS devices are susceptible to damage from electrostatic charge. Pre...
Description RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V

File Size 160.55K  /  5 Page

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    MOTOROLA
Part No. MHV5IC2215NR2
OCR Text ...z Bandwidth @ Pout = 23 dBm f = 2110- 2170 MHz Adjacent Channel Power Ratio Input Return Loss Gps GF ACPR IRL 23 -- -- -- 24 0.3 - 56 - 12 27 0.5 - 54 - 10 dB dB dBc dB Typical N - CDMA Tests (In Freescale Test Fixture, 50 ohm system) VD...
Description 2170 MHz, 23 dBm, 28 V Single N鈥揅DMA

File Size 578.93K  /  16 Page

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    Motorola
Part No. MHPA21010
OCR Text ...on Applications MHPA21010 2110-2170 MHz 10 W, 24 dB RF HIGH POWER LDMOS AMPLIFIER CASE 301AP-02, STYLE 3 ABSOLUTE MAXIMUM RATING...0.2 41.5 1.5:1 -- -55 Max -- -- 0.6 -- 2:1 10 -50 dB dBc Unit mA dB dB dBm Adjacent Channel Power...
Description MHPA21010 2110-2170 MHz, 10 W, 23.7 dB RF High Power LDMOS Amplifier

File Size 93.45K  /  2 Page

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    Motorola Semiconductor
Part No. MHL21336N
OCR Text ...ee Terminations MHL21336N 2110 - 2170 MHz 3.0 W, 31 dB RF LINEAR LDMOS AMPLIFIER CASE 301AP - 02, STYLE 1 Table 1. Absolute Maximum Ratings (TC = 25C unless otherwise noted) Rating DC Supply Voltage RF Input Power Storage Tempe...
Description RF Linear LDMOS Amplifier

File Size 138.20K  /  5 Page

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