| |
|
 |
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| Part No. |
HY27LF081G2M-TCP HY27LF081G2M-TCS HY27LF161G2M-TCB HY27LF161G2M-TCS HY27SF081G2M-TCP HY27SF081G2M-TCB HY27LF081G2M-TCB HY27LF161G2M-TCP HY27SF081G2M-F HY27UF081G2M-F HY27SF161G2M-FP HY27UF161G2M-FP HY27SF081G2M-V HY27UF081G2M-V HY27SF161G2M-VP HY27UF161G2M-VP HY27LF081G2M-VCB HY27LF081G2M-VCP HY27LF081G2M-VCS HY27LF081G2M-VEP HY27LF081G2M-VES HY27LF081G2M-TMB HY27LF081G2M-TMP HY27LF081G2M-TMS HY27LF161G2M-TMB HY27LF161G2M-TMP HY27LF161G2M-TMS HY27SF081G2M-TMB HY27SF081G2M-TMP HY27SF081G2M-TMS HY27SF161G2M-TMB HY27SF161G2M-TMP HY27SF161G2M-TMS HY27UF081G2M-TMB HY27UF081G2M-TMP HY27UF081G2M-TMS HY27UF161G2M-TMB HY27UF161G2M-TMP HY27UF161G2M-TMS HY27LF081G2M-VMB HY27LF081G2M-VMP HY27LF081G2M-VMS HY27LF161G2M-VMB HY27LF161G2M-VMP HY27LF161G2M-VMS HY27SF081G2M-VMB HY27SF081G2M-VMP HY27SF161G2M-VMB HY27SF161G2M-VMP HY27SF161G2M-VMS HY27UF081G2M-VMB HY27UF081G2M-VMP HY27UF081G2M-VMS HY27UF161G2M-VMB HY27UF161G2M-VMP HY27UF161G2M-VMS HY27LF081G2M-VEB HY27SF081G2M-VMS HY27LF081G2M-TPMP HY27LF081G2M-VPMP HY27SF081G2M-TPMP HY27SF081G2M-VPMP HY27LF161G2M-TPIS HY27SF161G2M-TPIS HY27LF161G2M-TIS HY27LF161G2M-VIS HY27SF161G2M-TIS HY27SF161G2M-VIS HY27LF161G2M-VPIS HY27SF081G2M-TEP HY27SF081G2M-TP
|
| OCR Text |
...9 2004
Preliminary
Jan.19 2005
Preliminary
Rev 0.7 / Apr. 2005
1
Preliminary HY27UF(08/16)1G2M Series HY27SF(08/16)1G2M S...S)F(08/16)1G2M-T(P) : 48-Pin TSOP1 (12 x 20 x 1.2 mm) - HY27(U/S)F(08/16)1G2M-T (Lead) - HY27(U/S)F(... |
| Description |
Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes
3.3V Differential Transceiver 8-PDIP -40 to 85
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 3.3V PROM, 30 ns, PDSO48
CONNECTOR ACCESSORY 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48
CONNECTOR ACCESSORY 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48
Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.2"; Tip/Nozzle Size:0.40 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
COILTRONICS RoHS Compliant: Yes 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.1"; Tip/Nozzle Size:0.43 RoHS Compliant: Yes
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
|
| File Size |
484.04K /
48 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
|
| Part No. |
RKZ27-1KD
|
| OCR Text |
2005 page 1 of 7 rkz-kd series silicon planar zener diode for stabilized power supply rej03g1264-0100 rev.1.00 nov 16, 2005 fea...s application; they do not convey any license under any intellectual property rights, or any other ... |
| Description |
25.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
|
| File Size |
70.76K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
GTM
|
| Part No. |
GS138K
|
| OCR Text |
2005/10/11 REVISED DATE :
GS138K
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
50V 2 640mA
The GS138K utilized advan...s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Fig 5. Forward Chara... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
| File Size |
332.90K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Renesas Technology
|
| Part No. |
HTT1127E
|
| OCR Text |
2005 page 1 of 8 htt1127e silicon npn epitaxial twin transistor rej03g0839-0100 (previous ade-208-1540) rev.1.00 aug.10.2005 fea...s 21 | 2 13 16 ? db noise figure nf ? 1.0 1.7 db v ce = 1 v, i c = 5 ma, f = 900 mhz, ... |
| Description |
Silicon NPN Epitaxial Twin Transistor
|
| File Size |
298.62K /
9 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
