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				SANYO[Sanyo Semicon Device]
Part No.	2SJ499
OCR Text	...-18 --10 . --4 0V --16 Drain Current, ID -- A 0V --8 --10 . --3.5V Drain Current, ID -- A --14 --12 --10 --...1m ID= --10A DC op Drain Current, ID -- A td (off) tr 10 s 100A tf 100 7 5 3...
Description	Load Switching Applications
File Size	31.35K / 4 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SJ501
OCR Text	...m 2091A [2SJ501] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.5 Specifications Absolute Maximum Ratings ...1m s 10 ms Switching Time, SW Time - ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 3 5 7 -0.1 2 3 5 7 -1.0...
Description	P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	237.49K / 4 Page	View it Online	Download Datasheet

				Sanyo Electric Co., Ltd. Sanyo Semicon Device
Part No.	2SJ502
OCR Text	...m 2091A [2SJ502] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.5 Specifications Absolute Maximum Ratings ...1m s 10 ms er tr 10 7 5 3 2 td(on) at io n Operation in this area is limited by ...
Description	Ultrahigh-Speed Switching Applications 超高速开关应 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	169.75K / 4 Page	View it Online	Download Datasheet

				Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device]
Part No.	2SJ503 2SJ503TP-FA
OCR Text	...onditions Ratings -30 20 -4 -16 1.0 20 150 -55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta = 25C Parameter Drai...1m s Drain Current, ID - A 10 100 7 5 3 2 10 7 5 3 2 1.0 7 -0.1 2 3 5 td(off) tf ...
Description	TRANSISTOR \| MOSFET \| P-CHANNEL \| 30V V(BR)DSS \| 4A I(D) \| TO-251VAR 晶体管\| MOSFET的\| P通道\| 30V的五（巴西）直\| 4A条（丁）\|51VAR Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管\| MOSFET的\| P通道\| 30V的五（巴西）直\| 4A条（丁）\|52VAR P-Channel Silicon MOSFET DC/DC Converter Applications
File Size	86.59K / 4 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ504
OCR Text	... Typ -- -- -- -- -- 0.042 0.065 16 1750 800 180 16 100 230 140 -1.0 100 Max -- -- -10 10 -2.0 0.055 0.095 -- -- -- -- -- -- -- -- -- -- Unit...1m 10 m Pulse Width 100 m PW (S) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	50.21K / 10 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ505 2SJ505L 2SJ505S
OCR Text	...-8 -12 Drain to Source Voltage -16 -20 V DS (V) Typical Transfer Characteristics -100 V DS = -10 V Pulse Test 25 C -80 -60 Drain...1m 10 m Pulse Width 100 m PW (S) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. ...
Description	Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开 Power switching MOSFET
File Size	53.43K / 10 Page	View it Online	Download Datasheet

				Renesas Electronics, Corp. HITACHI[Hitachi Semiconductor]
Part No.	2SJ506 2SJ506L 2SJ506S
OCR Text	...-- -- Typ -- -- -- -- -- 65 110 16 660 440 140 12 65 85 65 -1.05 65 Max -- -- -10 10 -2.0 85 180 -- -- -- -- -- -- -- -- -- -- Unit V V A A ...1m 10 m Pulse Width 100 m PW (S) 1 10 7 2SJ506(L), 2SJ506(S) Switching Time Test ...
Description	Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开 Power switching MOSFET
File Size	49.71K / 10 Page	View it Online	Download Datasheet

				Sanyo Semicon Device Sanyo Electric Co., Ltd.
Part No.	2SJ520 2SJ520TP-FA
OCR Text	...-2 --4 --6 --8 --10 --12 --14 --16 --18 --20 Drain Current, ID - A IT00950 Drain-to-Source Voltage, VDS - V IT00951 No.6435-3...1m 10 Gate-to-Source Voltage, VGS - V 100s --8 --7 --6 --5 --4 --3 --2 --1 0 0 5 10 15 20 ...
Description	P-Channel Silicon MOSFET Load Switching Applications Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管\| MOSFET的\| P通道\| 20V的五（巴西）直\| 10A条（丁）\|52VAR
File Size	43.24K / 4 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
Part No.	2SJ522
OCR Text	...-2 --4 --6 --8 --10 --12 --14 --16 --18 --20 --4.0V VGS= --3.5V 0 --2.5 --5.0 --7.5 --10.0 --12.5 --15.0 IT03698 ...1m DC 10s s 1.65 1.5 Drain Current, ID -- A Operation in this area is limited by RDS...
Description	P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	30.28K / 4 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ526
OCR Text	...-- -- Typ -- -- -- -- -- 0.11 0.16 8 580 300 85 10 55 85 60 -1.2 60 Max -- -- -10 10 -2.0 0.15 0.23 -- -- -- -- -- -- -- -- -- -- Unit V V A...1m 10 m Pulse Width 100 m PW (S) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	50.48K / 9 Page	View it Online	Download Datasheet

For 16 1m Found Datasheets File :: 19048 Search Time::1.375ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |