| |
|
 |
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
HUFA75337S3S HUFA75337G3 HUFA75337P3
|
| OCR Text |
...plied.
NOTE: 1. TJ = 25oC to 150oc.
Electrical Specifications
PARAMETER OFF STATE SPECIFICATIONS
TC = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage Zero Gate Voltage... |
| Description |
TRANS PNP BIPOLAR 45V SOT323 75 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs
|
| File Size |
221.99K /
10 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
HUFA75531SK8
|
| OCR Text |
... = 0V VDS = 70V, VGS = 0V, TA = 150oc Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS Thermal Resistance Junction to Ambient Pad Area = 0.76 in2 (4... |
| Description |
6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET
|
| File Size |
247.04K /
11 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
HUFA75617D3S HUFA75617D3
|
| OCR Text |
.... . . . Tpkg NOTE: TJ = 25oC to 150oc.
100 100 20 16 11 Figure 4 Figures 6, 14, 15 64 0.43 -55 to 175 300 260
W W/oC
oC oC oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the dev... |
| Description |
16A, 100V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs 16 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
|
| File Size |
195.01K /
10 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
HUFA75623S3ST HUFA75623P3 HUFA75623S3S
|
| OCR Text |
... . . Tpkg NOTE: 1. TJ = 25oC to 150oc.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions... |
| Description |
22A, 100V, 0.064 Ohm, N-Channel, UltraFETPower MOSFETs 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs
|
| File Size |
196.72K /
10 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
HUFA75645S3S HUFA75645P3
|
| OCR Text |
.... . Tpkg NOTES: 1. TJ = 25oC to 150oc.
W W/oC oC
oC oC
CAUTION: Stresses above those listed in "Absol24ute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these o... |
| Description |
75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs
|
| File Size |
152.88K /
10 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
HUFA75652G3
|
| OCR Text |
.... . Tpkg NOTES: 1. TJ = 25oC to 150oc.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions... |
| Description |
75A, 100V, 0.008 Ohm, N-Channel UltraFETPower MOSFET 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET
|
| File Size |
192.92K /
10 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
HUFA75829D3S HUFA75829D3 HUFA75829D3ST
|
| OCR Text |
.... . Tpkg NOTES: 1. TJ = 25oC to 150oc.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions... |
| Description |
18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFETs 18A, 150V, 0.110 Ohm, N-Channel, UltraFETPower MOSFETs
|
| File Size |
189.57K /
10 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
HUFA75831SK8T HUFA75831SK8
|
| OCR Text |
...= 0V VDS = 135V, VGS = 0V, TA = 150oc Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS Thermal Resistance Junction to Ambient RJA Pad Area = 0.76 in... |
| Description |
3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET 3 A, 150 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA 3A, 150V, 0.095 Ohm, N-Channel, UltraFETPower MOSFET 3A/ 150V/ 0.095 Ohm/ N-Channel/ UltraFET Power MOSFET
|
| File Size |
247.65K /
11 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|