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IRF[International Rectifier]
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Part No. |
IRLU3110ZPBF IRLR3110ZPBF
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OCR Text |
...max
G
VDSS = 100V RDS(on) = 14m
S
Description
Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additio... |
Description |
AUTOMOTIVE MOSFET
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File Size |
734.03K /
11 Page |
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it Online |
Download Datasheet
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AOSMD[Alpha & Omega Semiconductors]
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Part No. |
AO4703L AO4703
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OCR Text |
...D = -12A (VGS =- 20V) RDS(ON) < 14m (VGS =- 20V) RDS(ON) < 15m (VGS = -10V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A
D
K
SOIC-8
Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol VDS Drain-Source Voltag... |
Description |
P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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File Size |
214.66K /
5 Page |
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it Online |
Download Datasheet
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AOSMD[Alpha & Omega Semiconductors]
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Part No. |
AO4705L AO4705
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OCR Text |
...D = -10A (VGS = -10V) RDS(ON) < 14m (VGS = -20V) RDS(ON) < 16m (VGS = -10V) SCHOTTKY VDS (V) = 30V, IF = 5A, VF<0.52V@3A
D
K
SOIC-8
Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol VDS Drain-Source Volta... |
Description |
P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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File Size |
118.36K /
5 Page |
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it Online |
Download Datasheet
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AOSMD[Alpha & Omega Semiconductors]
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Part No. |
AOU436
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OCR Text |
...N) < 8.5m (VGS = 10V) RDS(ON) < 14m (VGS = 4.5V)
TO-251 D
Top View Drain Connected to Tab
G S
G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltag... |
Description |
N-Channel Enhancement Mode Field Effect Transistor
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File Size |
66.23K /
5 Page |
View
it Online |
Download Datasheet
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Price and Availability
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