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  0.62 Datasheet PDF File

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    IRU1010

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRU1010
OCR Text ... with at least 0.5" square of 0.062" FR4 board using 1 oz. copper has 70C/W which is lower than the calculated number. Rev. 1.4 06/29/01 5 IRU1010 Notes IR WORLD HEADQUARTERS : 233 Kansas St., El Segundo, California 90245, US...
Description 1A LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR 1A低压差型正,可调式稳压器

File Size 94.64K  /  6 Page

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    IXFTN100 IXFX15N100 IXFH14N100 IXFHN100 IXFX14N100 IXFT14N100 IXFT15N100

IXYS, Corp.
IXYS[IXYS Corporation]
Part No. IXFTN100 IXFX15N100 IXFH14N100 IXFHN100 IXFX14N100 IXFT14N100 IXFT15N100
OCR Text ... (IXFT) G S (TAB) 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 6 Features q International standard packages q Low RDS (on) HDMOSTM process q Rugged polysilicon gate cell structure q Unclamped Inductive Switchi...
Description HiPerFET Power MOSFETs 14 A, 1000 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 115.80K  /  4 Page

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    IXTH15N70

InterFET Corporation
Part No. IXTH15N70
OCR Text ...erature for soldering 1.6 mm (0.062 in.) from case for 10 s q q q q International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure High commutating dv/dt rating Fast switching times ...
Description N-Channel Enhancement Mode

File Size 34.51K  /  2 Page

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    IXTK62N25

IXYS[IXYS Corporation]
Part No. IXTK62N25
OCR Text ... .150 .170 .070 .090 .238 .248 .062 .072 Source-Drain Diode Symbol IS ISM VSD t rr Qrr Test Conditions VGS = 0V Ratings and Characteristics (TJ = 25C unless otherwise specified) Min. Typ. Max. 62 248 1.5 A A V Repetitive; pulse wid...
Description    High Current MegaMOSFET
High Current MegaMOSFET

File Size 84.40K  /  2 Page

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    IXTM24N50 IXTH21N50 IXTM21N50 IXTH24N50

IXYS[IXYS Corporation]
Part No. IXTM24N50 IXTH21N50 IXTM21N50 IXTH24N50
OCR Text ...erature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2 4 100 TJ = 25C TJ = 125C 200 1 0.25 0.23 V Applications Switch-...
Description MegaMOSFET

File Size 107.29K  /  4 Page

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    IXTM5N100 IXTM5N100A IXTH5N100 IXTH5N100A

IXYS[IXYS Corporation]
Part No. IXTM5N100 IXTM5N100A IXTH5N100 IXTH5N100A
OCR Text ...erature for soldering 1.6 mm (0.062 in.) from case for 10 s Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast ...
Description Discrete MOSFETs: Standard N-channel Types
Standard Power MOSFET

File Size 103.16K  /  4 Page

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    IXTM75N10 IXTH75N10 IXTH67N10 IXTM67N10 IXTM75N100

JFETs
IXYS[IXYS Corporation]
Part No. IXTM75N10 IXTH75N10 IXTH67N10 IXTM67N10 IXTM75N100
OCR Text ...erature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 100 2 4 100 TJ = 25C TJ = 125C 200 1 0.025 0.020 V Applications Switc...
Description    MegaMOSFET
Receiver IC; Supply Voltage:5V; Package/Case:28-SOIC; Interface Type:Serial; Leaded Process Compatible:No; No. of Channels:7; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5V; Mounting Type:Surface Mount RoHS Compliant: No
Receiver IC; Package/Case:28-TSSOP; Current Rating:2.8mA; Interface Type:Serial; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5V; Mounting Type:Surface Mount; Voltage Rating:3.3V RoHS Compliant: No
32-Bit Microcontroller IC; Controller Family/Series:(ARM9); Memory Size, RAM:16MB; No. of I/O Pins:24; No. of PWM Channels:1; Clock Speed:200MHz; Interface:AC97, I2S, SPI, UART, USB; Package/Case:208-LQFP; A/D Converter:12 Bits RoHS Compliant: Yes
IC ARM920T MCU 200MHZ 272-TFBGA
1000V HiPerFET power MOSFET

File Size 110.59K  /  4 Page

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    IXTN21N100 IXTK21N100

IXYS[IXYS Corporation]
Part No. IXTN21N100 IXTK21N100
OCR Text ... .150 .170 .070 .090 .238 .248 .062 .072 Source-Drain Diode Symbol IS ISM VSD t rr IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 21 84 1.5 A A V miniBLOC, SOT-227 B Rep...
Description Discrete MOSFETs: Standard N-channel Types
High Voltage MegaMOSTMFETs

File Size 136.10K  /  4 Page

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    IXTQ82N25P IXTK82N25P IXTT82N25P

IXYS[IXYS Corporation]
Part No. IXTQ82N25P IXTK82N25P IXTT82N25P
OCR Text ...TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-264 TO-268 TC = 25C External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150...
Description    PolarHT Power MOSFET
Discrete MOSFETs: Standard N-channel Types

File Size 606.20K  /  5 Page

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    IXTT10P50 IXTT11P50 IXTH10P50 IXTH11P50

IXYS[IXYS Corporation]
Part No. IXTT10P50 IXTT11P50 IXTH10P50 IXTH11P50
OCR Text ...erature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268 (TO-247) 300 1.13/10 Nm/lb.in. 6 4 g g Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell ...
Description Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated

File Size 120.75K  /  2 Page

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