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  .080a Datasheet PDF File

For .080a Found Datasheets File :: 3047    Search Time::1.5ms    
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    INFINEON[Infineon Technologies AG]
Part No. SPP80N06S2-09 SPB80N06S2-09
OCR Text ...JC RthJA RthJA - Values typ. 0.52 max. 0.8 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specifie...80A, VGS =0 to 10V VDD =44V, ID =80A Symbol Conditions min. Values typ. 68 2360 610 150 14 ...
Description Low Voltage MOSFETs - TO220/263; 80 A; 55 V; NL; 9.1 mOhm
OptiMOS Power-Transistor

File Size 315.81K  /  8 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPP80N06S2-H5 SPB80N06S2-H5
OCR Text ...JC RthJA RthJA - Values typ. 0.34 max. 0.5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specifie...80A 1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 156A at 2...
Description OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - TO220/263; 80A; 55V; NL; 5.5mOhm

File Size 307.73K  /  8 Page

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    AP95T07GS

Advanced Power Electronics Corp.
Part No. AP95T07GS
OCR Text ...ermal resistance, junction-case 0.5 /w rthj-a 40 /w data and specifications subject to change without notice thermal data parameter storag...80a - 85 135 nc q gs gate-source charge v ds =40v - 25 - nc q gd gate-drain ("miller") charge v gs =...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 144.41K  /  5 Page

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    AP95T07GP-HF AP95T07GP-HF-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP95T07GP-HF AP95T07GP-HF-14
OCR Text ...ermal resistance, junction-case 0.5 /w rthj-a maixmum thermal resistance, junction-ambient 62 /w data and specifications subject to change...80a - 85 135 nc q gs gate-source charge v ds =40v - 25 - nc q gd gate-drain ("miller") charge v gs =...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 93.26K  /  4 Page

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    Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. SPP80N06S2L-06 SPB80N06S2L-06
OCR Text ...JC RthJA RthJA - Values typ. 0.4 max. 0.6 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified...80A, VGS =0 to 10V VDD =44V, ID =80A Symbol Conditions min. Values typ. 124 3800 890 240 11...
Description Low Voltage MOSFETs - TO220/263; 80 A; 55V; LL; 6.3 mOhm
OptiMOS Power-Transistor 的OptiMOS功率晶体

File Size 309.50K  /  8 Page

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    Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. SPP80N06S2L-07 SPB80N06S2L-07 INFINEONTECHNOLOGIESAG-SPP80N06S2L-07
OCR Text ...JC RthJA RthJA - Values typ. 0.46 max. 0.7 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specifie...80A, VGS =0 to 10V VDD =44V, ID =80A Symbol Conditions min. Values typ. 104 3160 740 210 18...
Description Low Voltage MOSFETs - TO220/263; 80 A; 55V; LL; 7 mOhm
OptiMOS Power-Transistor 的OptiMOS功率晶体

File Size 308.30K  /  8 Page

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    Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. SPP80N06S2L-09 SPB80N06S2L-09
OCR Text ...JC RthJA RthJA - Values typ. 0.52 max. 0.8 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specifie...80A, VGS =0 to 10V VDD =44V, ID =80A Symbol Conditions min. Values typ. 94 2620 610 170 10 ...
Description Low Voltage MOSFETs - TO220/263; 80A; 55V; LL; 8.5mOhm
OptiMOS Power-Transistor 的OptiMOS功率晶体

File Size 310.79K  /  8 Page

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    FGH40N60SFDTU FGH40N60SFD

Fairchild Semiconductor
Part No. FGH40N60SFDTU FGH40N60SFD
OCR Text ...resistance, junction to case - 0.43 o c / w r ? jc (diode) thermal resistance, junction to case - 1.45 o c / w r ? ja thermal resistance, j...80a common emitter t c = -40 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v...
Description 600V, 40A, Field Stop IGBT
600 V, 40 A Field Stop IGBT

File Size 287.07K  /  9 Page

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    APT80GP60J

Advanced Power Technology
Part No. APT80GP60J
OCR Text ... Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characterist...80A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 80A, Tj = 125C) Collector Cut-off Curr...
Description MOSFET
POWER MOS 7 IGBT

File Size 99.07K  /  6 Page

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    FGB40N60SM

Fairchild Semiconductor
Part No. FGB40N60SM
OCR Text ...resistance, junction to case - 0.43 o c / w r ja thermal resistance, junction to ambient - 62.5 o c / w device marking device package reel...80a 40a i c = 20a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emitt...
Description 600V, 40A Field Stop IGBT

File Size 827.88K  /  9 Page

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