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  -180v Datasheet PDF File

For -180v Found Datasheets File :: 797    Search Time::1.093ms    
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    2SC508

Savantic, Inc.
Part No. 2SC508
OCR Text ...or-base breakdown voltage :VCBO=180V(min) APPLICATIONS *For power switching and TV horizontal output applications. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maxi...
Description Silicon NPN Power Transistors

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    2SC508

Inchange Semiconductor Company Limited
Part No. 2SC508
OCR Text ...or-base breakdown voltage :VCBO=180V(min) APPLICATIONS For power switching and TV horizontal output applications. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maxi...
Description Silicon NPN Power Transistors

File Size 118.99K  /  3 Page

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    BDY26A

Seme LAB
Part No. BDY26A
OCR Text ... collector - emitter voltage 180v v ebo emitter ? base voltage 10v i c continuous collector current 6a i b base current 3a p tot total power dissipation at t case = 25c 50w derate above 25c 0.29 w/c t j junction...
Description HIGH CURRENT NPN SILICON TRANSISTOR

File Size 39.26K  /  2 Page

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    HV823 HV823LG HV823X

Supertex Inc
SUTEX[Supertex, Inc]
Supertex Inc
Part No. HV823 HV823LG HV823X
OCR Text ...ply voltage DC to AC conversion 180V peak-to-peak typical output voltage Large output load capability typically 50nF Permits the use of high-resistance elastomeric lamp components Adjustable output lamp frequency to control lamp color, lamp...
Description High Voltage EL Lamp Driver

File Size 388.63K  /  8 Page

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    BDY26B

Seme LAB
Part No. BDY26B
OCR Text ... collector - emitter voltage 180v v ebo emitter ? base voltage 10v i c continuous collector current 6a i b base current 3a p tot total power dissipation at t case = 25c 50w derate above 25c 0.29 w/c t j junction...
Description HIGH CURRENT NPN SILICON TRANSISTOR

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    ZXTN25100DFH

Zetex Semiconductors
Part No. ZXTN25100DFH
OCR Text 180V BVCEO > 100V BVECO > 6V IC(cont) = 2.5A VCE(sat) < 95mV @ 1A RCE(sat) = 86m PD = 1.25W Complementary part number ZXTP25100DFH Description Advanced process capability and package design have been used to maximise the power handling ...
Description 100V, SOT23, NPN medium power transistor

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    2SK2489

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SK2489
OCR Text 180V 10A FEATURES *oe Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. *oe static Rds(on) is small. The *oe switching time is fast. The APPLICATION OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) *...
Description VZ Series Power MOSFET(180V 10A)

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    2SC3519 2SC3519A

Inchange Semiconductor Company Limited
Part No. 2SC3519 2SC3519A
OCR Text ...geV(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A *Good Linearity of hFE *Complement to Type 2SA1386/A APPLICATIONS *Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT ...
Description isc Silicon NPN Power Transistors

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    2SA1516

Inchange Semiconductor Company Limited
Part No. 2SA1516
OCR Text ...r Breakdown Voltage: V(BR)CEO= -180v(Min) *Good Linearity of hFE *Complement to Type 2SC3907 APPLICATIONS *Power amplifier applications *Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM...
Description isc Silicon PNP Power Transistor

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    2SA1492

Inchange Semiconductor Company Limited
Part No. 2SA1492
OCR Text ...ter Breakdown VoltageV(BR)CEO= -180v(Min) *Good Linearity of hFE *Complement to Type 2SC3856 APPLICATIONS *For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Ba...
Description isc Silicon PNP Power Transistor

File Size 123.87K  /  3 Page

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