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For vec Found Datasheets File :: 1730 Search Time::1.234ms
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				Mitsubishi Electric Semiconductor
Part No.	CM100BU-12H09
OCR Text	...elay time tf Turn-off fall time vec(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Qrr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Rth(c-f) Contact thermal resistance Min -- 4.5 ...
Description	IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
File Size	101.24K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM100MX-12A
OCR Text	.... 6) Tj = 25C Tj = 125C Chip vec(Note.3) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R RGint RG IE = 100A, VGE = 0V Thermal resistance per IGBT (Note. 1) (Junction to case) per free wheeling diode Internal gate resistance TC = 25C, pe...
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	215.32K / 8 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM150DY-24A
OCR Text	...f) tf trr (Note 1) Qrr (Note 1) vec(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter (Tj = 25C, unless otherwise specified) Test conditions VCE = VCES, VGE = 0V IC = 15mA, VCE = 10V VGE = VGES, VCE = 0V IC = 150A, VGE = 15V VCE = 10V...
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	94.39K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM150DY-12NF09
OCR Text	...f) tf trr (Note 1) Qrr (Note 1) vec(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capa...
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	87.25K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM150DX-24A
OCR Text	.... 6) Tj = 25C Tj = 125C Chip vec(Note.3) Emitter-collector voltage Rlead Rth(j-c)Q Rth(j-c)R Rth(c-f) RGint RG IE = 150A, VGE = 0V Module lead resistance Main terminals-chip, per switch Thermal resistance per IGBT (Note. 1) per free w...
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	197.37K / 7 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM150DU-34KA
OCR Text	...f) tf trr (Note 1) Qrr (Note 1) vec(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacit...
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	78.14K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM150DU-12H09
OCR Text	...elay time tf Turn-off fall time vec(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Qrr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Rth(c-f) Contact thermal resistance Min -- 4.5 ...
Description	IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
File Size	95.43K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM150DU-12F
OCR Text	...f) tf trr (Note 1) Qrr (Note 1) vec(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capa...
Description	IGBT MODULES HIGH POWER SWITCHING USE 150 A, 600 V, N-CHANNEL IGBT
File Size	96.67K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM100TU-24F CM100TU-24F09
OCR Text	...f) tf trr (Note 1) Qrr (Note 1) vec(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capa...
Description	MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE
File Size	109.63K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM600HX-12A
OCR Text	.... 6) Tj = 25C Tj = 125C Chip vec(Note.3) Emitter-collector voltage Rlead Rth(j-c)Q Rth(j-c)R Rth(c-f) RGint RG IE = 600A, VGE = 0V Module lead resistance Main terminals-chip Thermal resistance per IGBT (Note. 1) per free wheeling diod...
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	190.96K / 6 Page	View it Online	Download Datasheet

For vec Found Datasheets File :: 1730 Search Time::1.234ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |