|
|
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
Part No. |
CT90AM-18
|
Description |
Integrated Gate Bipolar transistor (IGBT) Modules: 250v INSULATED GATE BIPOLAR transistor
|
File Size |
22.58K /
2 Page |
View
it Online |
Download Datasheet |
|
|
|
Fuji Electric Holdings Co., Ltd.
|
Part No. |
2SJ281FA
|
Description |
transistor | MOSFET | P-CHANNEL | 250v V(BR)DSS | 3A I(D) | TO-252VAR 晶体管| MOSFET的| P通道| 250v五(巴西)直| 3A条(丁)|52VAR
|
File Size |
187.47K /
3 Page |
View
it Online |
Download Datasheet |
|
|
|
Hitachi,Ltd.
|
Part No. |
IRC634-008
|
Description |
transistor | MOSFET | N-CHANNEL | 250v V(BR)DSS | 8.7A I(D) | TO-220VAR 晶体管| MOSFET的| N沟道| 250v五(巴西)直| 8.7AI(四)|20VAR
|
File Size |
137.78K /
2 Page |
View
it Online |
Download Datasheet |
|
|
|
SMSC, Corp.
|
Part No. |
FSGL234R3
|
Description |
transistor | MOSFET | N-CHANNEL | 250v V(BR)DSS | 7A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 250v五(巴西)直| 7A条(丁)|05AF
|
File Size |
89.10K /
7 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|