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  ST62T01CB3 CCC Datasheet PDF File

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC M368L6523BUN-LB3 M381L6523BUM-LCC M381L6523BTM-LB3 M381L6523BTM-LCC M368L2923BTN-CB3 M381L2923BTM-LB3 M368L3324BTM-CB3 M368L2923BTN-LB3 M381L6523BTM-CB3 M368L3324BUM-CB3 M368L3324BTM-LB3 M368L6523BTN-CB3 M381L2923BTM-CB3 M381L2923BUM-CB3 M381L2923BUM-LB3 M381L6523BUM-CB3 M368L2923BUM-CCC M368L2923BUM-LCC M368L2923BTM-CCC M381L2923BTM-LCC M368L2923BTM-LCC M368L2923BUN-CB3 M368L6523BUN-CB3 M368L6523BUM-CCC M381L2923BUM-CCC M381L6523BTM-CCC
Description 64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
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