| |
|
 |
Integrated Silicon Solution
|
| Part No. |
IS41LV8200A
|
| OCR Text |
... ras lead time 25 ? 30 ? ns t rpc ras to cas precharge time 5 ? 5 ? ns t rsh ras hold time 14 ? 13 ? ns t rhcp ras hold time from ca...1-800-379-4774 7 rev. c 04/13/05 is41lv8200a issi ? ac characteristics (continued) (1,2,3,4,5,6) ... |
| Description |
2M x 8 (16-MBIT) DYNAMIC RAM
|
| File Size |
162.83K /
20 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
意法半导
STMicroelectronics N.V.
|
| Part No. |
L3000S
|
| OCR Text |
...6 7 8 9 10 11 12 13 14 15 16
RPC TX COMP AUT MR PWON RING CS GDK ONHK C2 C1 RGIN CRT IL
17 18
RDC IT
19 20 21 22 23 24 25 26
...1. Appropriate combinations of two pins define four of the five possible L3000S working states that ... |
| Description |
SLIC Kit Optimized for Applications with Both First and Second Generation Combos(用于短波/超短波通信系统的用户线接口) 用户接口工具包优化与包括第一代和第二代功放音箱（用于短波/超短波通信系统的用户线接口应用
|
| File Size |
302.66K /
32 Page |
View
it Online |
Download Datasheet |
| |
|
|
OKI ELECTRIC INDUSTRY CO LTD
|
| Part No. |
MSM519205-80TS-K
|
| OCR Text |
...t cwd t rwd t awd t csr t chr t rpc t dh t wch t wcr t oeh t oed t wcs t wrp t wrh t wts t cpwd t wth msm519205 -60 msm519205 -70 msm519205 -80 (v cc = 5 v 10%, ta = 0c to 70c) note 1, 2, 3, 12, 13 parameter symbol ns ns ns 10 10 10 note ... |
| Description |
4M X 2 EDO DRAM, 80 ns, PDSO24
|
| File Size |
675.30K /
18 Page |
View
it Online |
Download Datasheet |
| |
|
|
OKI SEMICONDUCTOR CO., LTD.
|
| Part No. |
MSM518200-70SJ MSM518200-60TS-K
|
| OCR Text |
...t cwd t rwd t awd t csr t chr t rpc t dh t wch t wcr t oeh t oed t wcs t wrp t wrh t wts t cpwd t wth msm518200 -60 msm518200 -70 msm518200 -80 (v cc = 5 v 10%, ta = 0c to 70c) note 1, 2, 3, 11, 12 parameter symbol max. 10 10 10 ns ns ns ... |
| Description |
4,194,304-Word X 2-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 4194304字2位动态随机存储器：快速页面模式型
|
| File Size |
462.86K /
17 Page |
View
it Online |
Download Datasheet |
| |
|
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| Part No. |
KMM366F410CK1 KMM366F400CK1
|
| OCR Text |
... ras to cas precharge time t rpc 5 5 ns access time from cas precharge t cpa 28 35 ns 3 hyper page mode cycle time t hpc 25 30 ns 13 hy...1 ttl loads and 100pf, voh=2.0v and vol=0.8v. operation within the t rcd (max) limit insures that ... |
| Description |
4M x 64 DRAM DIMM(4M x 64 动RAM模块)
|
| File Size |
384.74K /
20 Page |
View
it Online |
Download Datasheet |
| |
|
|
Samsung Electronic
|
| Part No. |
K4F16708112D K4F160811D-B K4F160812D K4F160812D-B K4F160812D-F
|
| OCR Text |
... ras to cas precharge time t rpc 5 5 ns access time from cas precharge t cpa 30 35 ns 3 fast page cycle time t pc 35 40 ns fast page r...1 ttl(3.3v) loads and 100pf. operation within the t rcd (max) limit insures that t rac (max) can b... |
| Description |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
|
| File Size |
223.79K /
20 Page |
View
it Online |
Download Datasheet |
| |
|
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| Part No. |
KMM366F203CK KMM366F213CK
|
| OCR Text |
... ras to cas precharge time t rpc 5 5 ns 14 access time from cas precharge t cpa 28 35 ns 3,14 hyper page cycle time t hpc 20 25 ns 12 h...1,2.)
dram module kmm366f213ck kmm366f203ck notes an initial pause of 200us is required after powe... |
| Description |
2M x 64 DRAM DIMM(2M x 64 动RAM模块)
2M x 64 DRAM DIMM(2M x 64 ?ㄦ?RAM妯″?)
|
| File Size |
408.83K /
20 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
