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For prelim Found Datasheets File :: 722    Search Time::1.812ms    
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    D1053 D1053UK

3M Company
SEME-LAB[Seme LAB]
Part No. D1053 D1053UK
OCR Text ... 341927. Fax (01455) 552612. prelim. 3/95 D1053UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS VGS(th) gfs Drain-Source Breakdown Voltage Zero Gate Volta...
Description Gold Metallised Multi-Purpose Silicon DMOS RF FET(50W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应50W-28V-1GHz,推挽) 金镀金属多功能硅的DMOS射频场效应管50 28V 1GHz的,推挽式)(镀金多用的DMOS射频硅场效应管(50 28V 1GHz的,推挽式)
METAL GATE RF SILICON FET

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    D1208UK D1208

Seme LAB
TT electronics Semelab Limited
Part No. D1208UK D1208
OCR Text ... 341927. Fax (01455) 552612. prelim. 3/95 D1208UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS gfs GPS Drain-Source Breakdown Voltage Zero Gate Voltage ...
Description    METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-12.5V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应40W-12.5V-500MHz,推挽)

File Size 16.38K  /  2 Page

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    IRF240

TT electronics Semelab Limited
Seme LAB
Part No. IRF240
OCR Text ...te: http://www.semelab.co.uk prelim. 6/00 IRF240 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Parameter BVDSS STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Test Conditions VGS = 0 ID = 1mA VGS = ...
Description N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 18.32K  /  2 Page

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    2N4900X 2N4898X 2N4899X

TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
Part No. 2N4900X 2N4898X 2N4899X
OCR Text ...bsite: http://www.semelab.co.uk prelim. 9/96 11.94 (0.470) 12.70 (0.500) Medium power, low frequency PNP bipolar transistor in a hermetically sealed TO-66 metal package. 2N4898X 2N4899X 2N4900X Electrical Characteristics (TC = 25C...
Description PNP Epitaxial Base Medium Power Transistor(TO-66 Metal Package中等功率PNP外延晶体管(TO-66 金属封装 进步党外延基地中等功率晶体管(至66金属封装)(中等功率进步党外延晶体管(至66金属封装))

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    SEME-LAB[Seme LAB]
SemeLAB
Part No. BFX39 BFX41 BFX40 BFX38
OCR Text ...te: http://www.semelab.co.uk prelim.9/00 BFX38 BFX39 BFX40 BFX41 ELECTRICAL CHARACTERISTICS (Tj = 25C unless otherwise stated) Parameter Test Conditions BFX38 ICBO Collector Cutoff Current BFX39 BFX40 BFX41 BFX38 V(BR)CBO Collector...
Description PNP SILICON EPITAXIAL TRANSISTOR

File Size 24.22K  /  3 Page

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    D2006UK

SEME-LAB[Seme LAB]
SemeLAB
Part No. D2006UK
OCR Text ... 341927. Fax (01455) 552612. prelim. 1/96 D2006UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS gfs GPS Drain-Source Breakdown Voltage Zero Gate Voltage ...
Description    METAL GATE RF SILICON FET

File Size 16.43K  /  2 Page

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    IRF430

Seme LAB
Part No. IRF430
OCR Text ...te: http://www.semelab.co.uk prelim. 6/00 IRF430 ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain - Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Br...
Description N-CHANNEL POWER MOSFET

File Size 20.73K  /  2 Page

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    Electronic Theatre Controls, Inc.
SEME-LAB[Seme LAB]
SemeLAB
Part No. 2N2484CSM 2N2484ACSM
OCR Text ... 341927. Fax (01455) 552612. prelim. 7/95 LAB ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Parameter V(BR)CBO* V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(on) Collector - Base Breakdown Voltage Emitter - Base Breakdow...
Description 60V Vce, 0.05A Ic NPN bipolar transistor
5-Pin &#181;P Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
HIGH SPEED MEDIUM POWER NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

File Size 19.39K  /  2 Page

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    2N7000CSM

SemeLAB
SEME-LAB[Seme LAB]
Part No. 2N7000CSM
OCR Text ...te: http://www.semelab.co.uk prelim. 8/00 2N7000CSM ELECTRICAL CHARACTERISTICS (TCASE = 25C unless otherwise stated) Parameter STATIC CHARACTERISTICS V(BR)DSS Gate - Source Breakdown Voltage VGS(th) IGSS IDSS ID(on)* Gate Thresho...
Description N.CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

File Size 18.57K  /  2 Page

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For prelim Found Datasheets File :: 722    Search Time::1.812ms    
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