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For power-limited Found Datasheets File :: 95445 Search Time::1.812ms
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				IRF[International Rectifier]
Part No.	IRF3007
OCR Text	Power MOSFET D 42 Volts Automotive Electrical Systems Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avala...limited) Continuous Drain Current, VGS @ 10V (See Fig.9) Continuous Drain Current, VGS @ 10V (Packag...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	146.42K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3205L IRF3205S IRF3205
OCR Text	Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switch...limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 138H RG = 25, IAS = 6...
Description	Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
File Size	144.83K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3205 IRF3205PBF
OCR Text	Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switch...limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 138H RG = 25, IAS = 6...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A? Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)
File Size	91.40K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDPF16N50 FDP16N50
OCR Text	...hese N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. T...limited by maximum junction temperature Thermal Characteristics Symbol RJC RCS RJA Parameter...
Description	500V N-Channel MOSFET
File Size	985.58K / 10 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
Part No.	FDPF39N20 FDP39N20 FDP39N20_07 FDP39N2007
OCR Text	...hese N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. T...limited by maximum junction temperature Thermal Characteristics Symbol RJC RCS RJA Parameter...
Description	200V N-Channel MOSFET 39 A, 200 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	1,067.74K / 10 Page	View it Online	Download Datasheet

				FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
Part No.	FDPF55N06 FDP55N06
OCR Text	...hese N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. T...limited by maximum junction temperature Thermal Characteristics Symbol RJC RJS RJA Parameter The...
Description	60V N-Channel MOSFET
File Size	1,125.07K / 10 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC]
Part No.	FLEX405
OCR Text	... amps of notification appliance power, expandable to 5.0 amps (meets the critical power requirements for ADA and UL-1971 devices). * Two bui...limited technology meets UL power-limiting requirements. * Programmable alarm presignal timer, alarm...
Description	Fire Alarm Control Panel with built-in DACT and remote-site upload/download capability
File Size	359.41K / 4 Page	View it Online	Download Datasheet

				Vincotech
Part No.	V23990-P545-C38-PM V23990-P545-X3X-D4-14 V23990-P545-A38-PM V23990-P545-A39-PM V23990-P545-C39-PM
OCR Text	...lications surge forward current power dissipation per diode dc collector current power dissipation per igbt maximum junction temperature sh...limited by t j max v ce a v a 600 w v ge i cpulse t j max p tot i c t j =t j max a v c 175 17mm hous...
Description	Industrial drives Embedded drives
File Size	915.84K / 23 Page	View it Online	Download Datasheet

				EUDYNA[Eudyna Devices Inc]
Part No.	FLU10ZM
OCR Text	Power GaAs FET FEATURES High Output Power: P1dB=29.5dBm(typ.) High Gain: G1dB=13.0dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Avai...LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Ha...
Description	L-Band Medium & High Power GaAs FET
File Size	231.32K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3703 IRF3703PBF
OCR Text	Power MOSFET Applications l Synchronous Rectification l Active ORing Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Sw...LIMITED BY R DS(on) TJ = 175 C I D , Drain Current (A) 100 1000 10us 10 TJ...
Description	30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A? Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A) Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?) Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
File Size	93.04K / 8 Page	View it Online	Download Datasheet

For power-limited Found Datasheets File :: 95445 Search Time::1.812ms
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