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Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S19140HSR3 MRF6S19140HR3
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| OCR Text |
...2 33 34 35 36 37 38 39 40 41 42 p3db = 53.1 dBm (204 W) Ideal
P1dB = 52.3 dBm (171 W) Actual
1
10
100
TWO-TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products versus Tone Spacing
Fi... |
| Description |
N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
394.12K /
12 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S19140HSR3 MRF6S19140HR3 MRF6S19140HR3_07
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| OCR Text |
...2 33 34 35 36 37 38 39 40 41 42 p3db = 53.1 dBm (204 W) Ideal
Pout, OUTPUT POWER (dBm)
P1dB = 52.3 dBm (171 W) Actual
1
10
100
TWO -TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Produ... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
400.35K /
11 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S21100HSR3 MRF6S21100HR3
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| OCR Text |
...c(on), 1 msec(off) f = 2140 MHz p3db = 51.5 dBm (141 W) P1dB = 50.9 dBm (123 W) Ideal
Figure 7. Intermodulation Distortion Products versus Tone Spacing
D, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 50 VDD = 28 Vdc, IDQ = 950 mA f1 = 2... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
666.08K /
15 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S21140HSR3 MRF6S21140HR3
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| OCR Text |
... P1dB = 52 dBm (158.5 W) Actual p3db = 52.6 dBm (180 W) Ideal
-30
-40
5th Order
-50
7th Order
-60 0.1
1
10
100
TWO-TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products v... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
510.34K /
12 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S21140HSR3 MRF6S21140HR3 MRF6S21140HR3_07 MRF6S21140HR307
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| OCR Text |
... P1dB = 52 dBm (158.5 W) Actual p3db = 52.6 dBm (180 W) Ideal
-20
-30
-40
5th Order
-50
7th Order
Figure 7. Intermodulation Distortion Products versus Tone Spacing
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 35 30 25... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
451.04K /
11 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S23140HR3
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| OCR Text |
...
P6dB = 53.51 dBm (224.39 W) p3db = 53.04 dBm (201.42 W) P1dB = 52.22 dBm (162.72 W)
Ideal
Actual
VDD = 28 Vdc, IDQ = 1300 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 2350 MHz 35 37 39 41 43
Pin, INPUT POWER (dBm)
Figure 8. P... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
429.74K /
12 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S27015NR1_07 MRF6S27015GNR1 MRF6S27015NR1 MRF6S27015NR107
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| OCR Text |
...9 30 31 32 P1dB = 43 dBm (20 W) p3db = 43.7 dBm (23 W) P6dB = 44.3 dBm (27 W)
Figure 8. Intermodulation Distortion Products versus Tone Spacing
Ideal
Actual VDD = 28 Vdc, IDQ = 160 mA Pulsed CW, 12 sec(on), 1% Duty Cycle f = 2600 M... |
| Description |
RF Power Field Effect Transistors
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| File Size |
538.89K /
17 Page |
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Freescale Semiconductor...
FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S9045NR1 MRF6S9045N MRF6S9045NBR1
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| OCR Text |
...28 29 P1dB = 48.2 dBm (66.07 W) p3db = 48.6 dBm (72.44 W)
Figure 8. Intermodulation Distortion Products versus Tone Spacing
Ideal
Actual VDD = 28 Vdc, IDQ = 350 mA Pulsed CW, 8 sec(on), 1 msec(off) Center Frequency = 880 MHz 30 31 ... |
| Description |
RF Power Field Effect Transistors
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| File Size |
623.99K /
16 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
MRF6S9060NR1 MRF6S9060NBR1
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| OCR Text |
...Products versus Tone Spacing
p3db = 50 dBm (150 W)
Ideal
P1dB = 49.1 dBm (100 W) Actual
VDD = 28 Vdc, IDQ = 450 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 880 MHz 28 29 30 31 32 33 34
Pin, INPUT POWER (dBm)
Figure 9. Pulse C... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
621.21K /
16 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S9125NR1_06 MRF6S9125NBR1 MRF6S9125NR1
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| OCR Text |
...Products versus Tone Spacing
p3db = 52.4 dBm (172.5 W)
Ideal
Actual
VDD = 28 Vdc, IDQ = 950 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 880 MHz 34 35 36
Pin, INPUT POWER (dBm)
Figure 9. Pulse CW Output Power versus Input Powe... |
| Description |
RF Power Field Effect Transistors
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| File Size |
848.94K /
20 Page |
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