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For memory- Found Datasheets File :: 69259 Search Time::2.094ms
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				NANYA TECHNOLOGY CORP
Part No.	M1U25664TUH4A0F-5A
OCR Text	...c standard 240-pin dual in-line memory module ? 32mx64 ddr2 unbuffered dimm based on 32mx16 ddr2 sdram ? performance: pc2-3200 pc2-4200 pc2-5300 speed sort 5a 37b 3c dimm cas latency * 3 4 5 unit f ck clock frequency 200 2...
Description	32M X 64 DDR DRAM MODULE, 0.6 ns, DMA240
File Size	127.77K / 14 Page	View it Online	Download Datasheet

				ISSI[Integrated Silicon Solution, Inc] ISSI[Integrated Silicon Solution Inc]
Part No.	IS42S16100C1 IS42S16100C1-5T IS42S16100C1-5TL IS42S16100C1-6T IS42S16100C1-6TL IS42S16100C1-7T IS42S16100C1-7TI IS42S16100C1-7TL IS42S16100C1-7TLI
OCR Text	... 11 ROW ADDRESS BUFFER MEMORY CELL ARRAY 2048 11 BANK 0 DQM SENSE AMP I/O GATE A10 8 COLUMN ADDRESS BUFFER BURST COUNTER COLUMN ADDRESS LATCH DATA IN BUFFER 16 16 256 COLUMN DECODER ROW DECODER M...
Description	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
File Size	750.59K / 79 Page	View it Online	Download Datasheet

				ETC[ETC]
Part No.	IS42S16400B IS42S16400B-6T IS42S16400B-6TL IS42S16400B-7T IS42S16400B-7TL
OCR Text	...eed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 4,096 rows by 256...
Description	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
File Size	466.90K / 55 Page	View it Online	Download Datasheet

				ISSI[Integrated Silicon Solution, Inc] ISSI[Integrated Silicon Solution Inc]
Part No.	IS42S16800A IS42S16800A-10T IS42S16800A-10TI IS42S16800A-10TL IS42S16800A-10TLI IS42S16800A-6T IS42S16800A-6TL IS42S16800A-7T IS42S16800A-7TI IS42S16800A-7TL IS42S16800A-7TLI IS42S32400A IS42S32400A-10T IS42S32400A-10TI IS42S32400A-10TL IS42S32400A-10TLI IS42S32400A-6T IS42S32400A-6TL IS42S32400A-7T IS42S32400A-7TI IS42S32400A-7TL IS42S32400A-7TLI IS42S81600A IS42S81600A-10T IS42S81600A-10TI IS42S81600A-10TL IS42S81600A-6T IS42S81600A-6TL IS42S81600A-7T IS42S81600A-7TI IS42S81600A-7TL IS42S81600A-7TLI 42S16800A
OCR Text	...eed CMOS, dynamic random-access memory designed to operate in 3.3V VDD and 3.3V VDDQ memory systems containing 134,217,728 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 33,554,432-bit bank is organized a...
Description	16Meg x 8 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
File Size	534.78K / 61 Page	View it Online	Download Datasheet

				ISSI[Integrated Silicon Solution, Inc] ETC
Part No.	IS42S32200 IS42S32200-6T IS42S32200-6TI IS42S32200-7T IS42S32200-7TI 42S32200
OCR Text	...eed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 2,048 rows by 256...
Description	512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
File Size	953.57K / 55 Page	View it Online	Download Datasheet

				Philips
Part No.	ISP1362
OCR Text	...096 bytes of multiconfiguration memory x Supports all four types of USB transfers: control, bulk, interrupt and isochronous x Supports multiframe buffering for isochronous transfer x Supports automatic interrupt polling rate mechanism x Sup...
Description	Single-chip Universal Serial Bus On-The-Go controller
File Size	528.15K / 148 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text	MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add the Rp vs tr ,tf & ...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	679.73K / 42 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text	...0B-DCB0,DIB0,HCB0,HIB0 FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. At Read2 operation in X16 device : A3 ~ A7 are Don' care ==> A3 ~ A7 ar...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	601.33K / 34 Page	View it Online	Download Datasheet

For memory- Found Datasheets File :: 69259 Search Time::2.094ms
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