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  MDS-060AAS12BA Datasheet PDF File

For MDS-060AAS12BA Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

    MDS105

Zarlink Semiconductor Inc
Part No. MDS105
Description Unmanaged 5-Port 10/100 Mbps Ethernet Switch

File Size 290.18K  /  35 Page

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HUA FENG CIRCUIT





    MDS800

ADPOW
Advanced Power Technology
Part No. MDS800
Description 800 Watts, 50 Volts Pulsed Avionics at 1090 MHz

File Size 51.56K  /  2 Page

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    MDS400

MICROSEMI POWER PRODUCTS GROUP
Microsemi, Corp.
GHz Technology
Part No. MDS400
Description MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 400; P(in) (W): 90; Gain (dB): 6.5; Vcc (V): 45; Pulse Width (&#181;sec): 128; Duty Cycle (%): 2; Case Style: 55KT-1 L BAND, Si, NPN, RF POWER TRANSISTOR
400 Watts Pk, 45 Volts, 32us, 2% Avionics 1030-1090 MHz

File Size 24.87K  /  1 Page

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    MDS762

Zentrum Mikroelektronik Dresden GmbH
Zentrum Mikroelektronik Dresden AG
Part No. MDS762
Description Package SSOP28

File Size 151.76K  /  1 Page

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    Insel Rectifier India P...
Part No. MDS100 MDS100/04 MDS100/16
Description THREE PHASE BRIDGE MODULE

File Size 833.67K  /  3 Page

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    MDS769

Zentrum Mikroelektronik Dresden GmbH
Part No. MDS769
Description Package PQFN48

File Size 88.42K  /  1 Page

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    CMDSH2-3

Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
Part No. CMDSH2-3
Description High Current- 200mA Super-MINI Schottky Diode(高电200mA,超小型肖特基二极
SUPER-MINI SCHOTTKY DIODE HIGH CURRENT - 200mA

File Size 80.57K  /  2 Page

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    160MDS

Naina Semiconductor ltd.
Part No. 160MDS
Description Three - Phase Bridge Rectifier Excellent power volume ratio

File Size 486.40K  /  3 Page

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    MDS767

Zentrum Mikroelektronik Dresden GmbH
Zentrum Mikroelektronik Dresden AG
Part No. MDS767
Description Package SSOP20

File Size 53.98K  /  1 Page

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    MDS150

Microsemi Corporation
Microsemi, Corp.
Part No. MDS150
Description 150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 150; P(in) (W): 20; Gain (dB): 10; Vcc (V): 50; Pulse Width (&#181;sec): 128; Duty Cycle (%): 2; Case Style: 55AW-1 L BAND, Si, NPN, RF POWER TRANSISTOR

File Size 88.73K  /  3 Page

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