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    P6KA36A P6KA6.8 P6KA6.8A P6KA6.8AHE3-54 P6KA6.811 P6KA39A P6KA7.5 P6KA7.5A P6KA8.2A P6KA9.1A P6KA16A P6KA30 P6KA27A P6KA

Vishay Siliconix
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VISHAY SEMICONDUCTORS
Part No. P6KA36A P6KA6.8 P6KA6.8A P6KA6.8AHE3-54 P6KA6.811 P6KA39A P6KA7.5 P6KA7.5A P6KA8.2A P6KA9.1A P6KA16A P6KA30 P6KA27A P6KA11A P6KA12 P6KA12A P6KA13A P6KA10 P6KA10A P6KA15 P6KA22A P6KA6.8AHE3/54 P6KA24A P6KA18
OCR Text ... 10 1 0.1 p ppm - peak p u lse p o w er (k w ) t d - p u lse w idth (s) 1.0 ms 10 ms 10 s 100 s 0.1 s 1.0 s n on-repetiti v e p u lse w a v eform sho w n in fig. 3 t a = 25 c 100 75 50 25 0 0 25 50 75 100 125 150 175 2...
Description PAR Transient Voltage Suppressors
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC

File Size 81.95K  /  5 Page

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    SI1410EDH SI1410EDH10

Vishay Siliconix
Part No. SI1410EDH SI1410EDH10
OCR Text ...01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 1. d u ty cycle, d = 2. per unit base = r thja = 100 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm 10 -4 10 -3 10 -2 10 -1 sq u are w a v e...
Description N-Channel 20 V (D-S) MOSFET

File Size 237.37K  /  11 Page

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    SI4110DY

Vishay Siliconix
Part No. SI4110DY
OCR Text ...a) i d 0.1 t a =25 c single p u lse limited b yr ds(on) * b v dss limited 10 ms 1ms 100 s 100 ms 1s 10 s dc www.datasheet.co.kr datasheet pdf - http://www.datasheet4u.net/ document number: 68766 s-81713-rev. a, 04-aug-08 www.vishay.co...
Description N-Channel 80-V (D-S) MOSFET

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    SI7884BDP-T1-E3

Vishay Siliconix
Part No. SI7884BDP-T1-E3
OCR Text ...) i d 0.1 t a = 25 c single p u lse 10 ms 100 ms 100 s, dc limited b yr ds(on) * b v dss limited 1ms 100 s 1s 10 s document number: 68395 s-82113-rev. b, 08-sep-08 www.vishay.com 5 vishay siliconix si7884bdp new product typical character...
Description N-Channel 40-V (D-S) MOSFET

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    SI4200DY-T1-GE3

Vishay Siliconix
Part No. SI4200DY-T1-GE3
OCR Text ...0.05 0.02 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 90 c/ w 3. t jm - t a = p dm z thja ...
Description Dual N-Channel 25 V (D-S) MOSFET

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    SI2324DS-T1-GE3

Vishay Siliconix
Part No. SI2324DS-T1-GE3
OCR Text ...100 0.2 0.1 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =166 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rfa...
Description Trans MOSFET N-CH 100V 1.6A T/R

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    SI2323CDS-T1-GE3

Vishay Siliconix
Part No. SI2323CDS-T1-GE3
OCR Text ...t (a) 0.1 t a = 25 c single p u lse 100 ms 10 s, dc limited b yr ds(on) * b v dss limited 1ms 100 s 1s 10 ms vishay siliconix si2323cds document number: 65700 s13-2081-rev. b, 30-sep-13 www.vishay.com 5 this document is subject to change...
Description P-Channel 20 V (D-S) MOSFET

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    SIS424DN-T1-GE3

Vishay Siliconix
Part No. SIS424DN-T1-GE3
OCR Text ...01 10 0.1 t a = 25 c single p u lse 100 s limited b yr ds(on) * b v dss limited 1ms 10 ms 100 ms 1s,10s dc v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d document...
Description MOSFET N-CH D-S 20V PPAK 1212-8

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    IRF744

VISHAY SILICONIX
Part No. IRF744
OCR Text ...5.5 v 5.0 v 4.5 v 20 s p u lse w idth t c = 25 c 4.5 v v ds , drain-to-so u rce v oltage ( v ) i d , drain c u rrent (a) 10 0 10 1 10 1 10 0 10 1 10 0 10 0 10 1 v ds , drain-to-so u rce v oltage ( v ) i d , drain c u rrent (a) b...
Description 8.8 A, 450 V, 0.63 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 139.08K  /  8 Page

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    SI4200DY

Vishay Siliconix
Part No. SI4200DY
OCR Text ...0.05 0.02 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 90 c/ w 3. t jm - t a = p dm z thja ...
Description Dual N-Channel 25 V (D-S) MOSFET

File Size 314.76K  /  10 Page

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