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    IS61LV25616AL IS61LV25616AL-10B IS61LV25616AL-10BI IS61LV25616AL-10K IS61LV25616AL-10KI IS61LV25616AL-10LQ IS61LV25616AL

ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
Part No. IS61LV25616AL IS61LV25616AL-10B IS61LV25616AL-10BI IS61LV25616AL-10K IS61LV25616AL-10KI IS61LV25616AL-10LQ IS61LV25616AL-10LQI IS61LV25616AL-10T IS61LV25616AL-10TI IS61LV25616AL-12B IS61LV25616AL-12K IS61LV25616AL-12KI IS61LV25616AL-12T IS61LV25616AL-12TI 61LV25616AL
OCR Text ...ng Range) Symbol Parameter ICC isb VDD Dynamic Operating Supply Current TTL Standby Current (TTL Inputs) TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs) 1 2 3 4 5 6 isb1 mA isb2 VDD = Max., Com. CE VDD -...
Description 20 AMP MINIATURE PC BOARD RELAY
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 12 ns, PDSO44

File Size 64.23K  /  12 Page

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    MOSEL[Mosel Vitelic Corp]
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic, Corp.
Part No. V62C3801024L-100T V62C3801024LL-85V V62C3801024L V62C3801024L_L-100B V62C3801024L_L-55B V62C3801024L_L-70B V62C3801024L_L-85B V62C3801024L-100V V62C3801024L-55T V62C3801024L-55V V62C3801024L-70T V62C3801024L-70V V62C3801024L-85T V62C3801024L-85V V62C3801024LL-100T V62C3801024LL-100V V62C3801024LL-55T V62C3801024LL-55V V62C3801024LL-70T V62C3801024LL-70V V62C3801024LL-85T V62C3801024LL-55B V62C3801024LL-100B V62C3801024LL-85B V62C3801024LL-70B
OCR Text ... Supply Current (CMOS Level) isb isb1 CE1 = VIH or CE2 = VIL CE1 > Vcc - 0.2V or CE2 < 0.2V, f = 0 VIN < 0.2V or VIN > Vcc- 0.2V IOL = 2 mA IOH = -2 mA - 0.5 5 1 0.4 - 2.4 0.5 5 1 0.4 - 2.4 0.5 5 1 0.4 - 2.4 0....
Description High Temp Tested PC357N5TJ00F
Ultra Low Power 128K x 8 CMOS SRAM 128K的超低功耗8 CMOS SRAM

File Size 82.24K  /  10 Page

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    K6E0808C1C K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C K6E0808C1C-JC12

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6E0808C1C K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C K6E0808C1C-JC12
OCR Text ... 12ns 15ns 20ns Standby Current isb isb1 Output Low Voltage Level Output High Voltage Level VOL VOH VOH1* * VCC=5.0V5%, Temp.=25C Min -2 -2 2.4 - Max 2 2 165 150 140 40 2 0.4 3.95 Unit A A mA mA mA V V V CAPACITANCE*(TA=25C,...
Description 32K X 8 STANDARD SRAM, 12 ns, PDSO28
32Kx8 Bit High Speed CMOS Static RAM 32Kx8位高速CMOS静态RAM

File Size 166.89K  /  8 Page

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    K6E0808C1E K6E0808C1E-C K6E0808C1E-C10 K6E0808C1E-C12 K6E0808C1E-C15 K6E0808C1E-I K6E0808C1E-I10 K6E0808C1E-I12 K6E0808C

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6E0808C1E K6E0808C1E-C K6E0808C1E-C10 K6E0808C1E-C12 K6E0808C1E-C15 K6E0808C1E-I K6E0808C1E-I10 K6E0808C1E-I12 K6E0808C1E-I15 K6E0808C1E-L K6E0808C1E-P
OCR Text ... 10ns 12ns 15ns Standby Current isb isb1 Min -2 -2 2.4 Max 2 2 80 80 80 20 2 0.6 0.4 3.95 V V V mA mA Unit A A mA Output Low Voltage Level Output High Voltage Level VOL VOH VOH1** * The above parameters are also guaranteed at indus...
Description 32K x 8 Bit High-Speed CMOS Static RAM 32K的8位高速CMOS静态RAM

File Size 180.35K  /  9 Page

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    KM681001A KM681001A-15 KM681001A-20

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SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM681001A KM681001A-15 KM681001A-20
OCR Text ...17/20ns part) Icc 190/180/170mA isb 30mA isb1 10mA 3.2. Update A.C parameters Previous spec. Items (15/17/20ns part) tCW 12/12/13ns tAW 12/12/13ns tWP1(OE=H) 12/12/13ns tDW 8/9/10ns Draft Data Jan. 18th, 1995 Apr. 22th, 1995 Remark Design T...
Description 128K x 8 Bit High-Speed CMOS Static RAM
128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.
From old datasheet system

File Size 164.53K  /  9 Page

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    KM681001B KM681001B-15 KM681001B-20

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM681001B KM681001B-15 KM681001B-20
OCR Text ...it A A mA Standby Current isb isb1 Output Low Voltage Level Output High Voltage Level VOL VOH CAPACITANCE*(TA=25C, f=1.0MHz) Item Input/Output Capacitance Input Capacitance Symbol CI/O CIN Test Conditions VI/O=0V VIN=0V MIN ...
Description From old datasheet system
128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.
128K x 8 Bit High-Speed CMOS Static RAM

File Size 180.26K  /  9 Page

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    KM681002C KM681002C-10 KM681002C-12 KM681002C-15 KM681002C-20 KM681002CI KM681002CI-10 KM681002CI-12 KM681002CI-15 KM681

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KM681002C KM681002C-10 KM681002C-12 KM681002C-15 KM681002C-20 KM681002CI KM681002CI-10 KM681002CI-12 KM681002CI-15 KM681002CI-20 KM681002CJ-10 KM681002CJ-12 KM681002CJ-15 KM681002CJ-20 KM681002CL KM681002CL-10 KM681002CL-12 KM681002CL-15 KM681002CL-20 KM681002CLI KM681002CLI-10 KM681002CLI-12 KM681002CLI-15 KM681002CLI-20 KM681002CT-20 KM681002CLJ-10 KM681002CLJ-12 KM681002CLJ-15 KM681002CLJ-20 KM681002CLT-10 KM681002CLT-12 KM681002CLT-15 KM681002CLT-20 KM681002CT-10 KM681002CT-12 KM681002CT-15 KM681002CJ-20000 KM681002CJI-2000 KM681002CT-10000
OCR Text ... 12ns 15ns 20ns Standby Current isb isb1 Min. Cycle, CS=VIH f=0MHz, CS VCC-0.2V, VINVCC-0.2V or VIN0.2V IOL=8mA IOH=-4mA IOH1=-0.1mA Normal L-ver. Min -2 -2 2.4 Max 2 2 80 75 73 70 30 5 0.5 0.4 3.95 V V V mA mA Unit A A mA Output Low Vol...
Description 128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAM5V工作。在经营商业和工业温度范围
128K X 8 STANDARD SRAM, 20 ns, PDSO32
128K X 8 STANDARD SRAM, 10 ns, PDSO32

File Size 197.74K  /  9 Page

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