|
|
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
|
Part No. |
pM200CSE060
|
Description |
FLAT-BASE type insulated insulated pACKAGE 平性基地型绝缘绝缘包装 FLAT-BASE type insulated pACKAGE
|
File Size |
119.64K /
6 Page |
View
it Online |
Download Datasheet |
|
|
|
|
Part No. |
STIp4006 STI2006 STIp3006 STI2506 STIp2506 STIp1506
|
Description |
triac; triac type:Standard; peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA Transient Surge protection Thyristor; package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:320V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting type:Through Hole; On-State Saturation Voltage:4V triac; triac type:Standard; peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; package/Case:3-TO-202; Current, It av:6A; Holding Current:50mA TRANSISTOR | BJT | NpN | 250V V(BR)CEO | 1A I(C) | TO-66 triac; triac type:Standard; peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:10mA; package/Case:V-pAK; Current, It av:4A; Holding Current:20mA TRANSISTOR | BJT | pNp | 150V V(BR)CEO | 1A I(C) | TO-66
|
File Size |
162.26K /
1 Page |
View
it Online |
Download Datasheet |
|
|
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
|
Part No. |
CM30MD3-12H
|
Description |
MEDIUM pOWER SWITCHING USE FLAT-BASE type, insulated type 中功率开关使用平面性基地型,绝缘型 MEDIUM pOWER SWITCHING USE FLAT-BASE type/ insulated type
|
File Size |
130.36K /
5 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|