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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
PM150RSE060
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OCR Text |
...pting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process. For example, typical VCE(sat)=1.7V b) Usin...IPM, 3 sinusoidal PWM VVVF inverter (Fig. 8) For IPM's each input signals (Fig. 7) Recommended value... |
Description |
From old datasheet system FLAT-BASE TYPE INSULATED PACKAGE
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File Size |
133.26K /
6 Page |
View
it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
PM50CSE060
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OCR Text |
...pting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process. For example, typical VCE(sat)=1.7V b) Usin...IPM, 3 sinusoidal PWM VVVF inverter (Fig. 8) For IPM's each input signals (Fig. 7) Recommended value... |
Description |
FLAT-BASE FLAT-BASE TYPE INSULATED PACKAGE From old datasheet system
|
File Size |
128.66K /
6 Page |
View
it Online |
Download Datasheet |
|
|
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
Part No. |
PM50RSE060
|
OCR Text |
...pting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process. For example, typical VCE(sat)=1.7V b) Usin...IPM, 3 sinusoidal PWM VVVF inverter (Fig. 8) For IPM's each input signals (Fig. 7) Recommended value... |
Description |
From old datasheet system MITSUBISHI INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
|
File Size |
132.40K /
6 Page |
View
it Online |
Download Datasheet |
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|
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
PM75RSE060
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OCR Text |
...pting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process. For example, typical VCE(sat)=1.7V b) Usin...IPM, 3 sinusoidal PWM VVVF inverter (Fig. 8) For IPM's each input signals (Fig. 7) Recommended value... |
Description |
From old datasheet system MITSUBISHI INTELLIGENT POWER MODULES
|
File Size |
133.32K /
6 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
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