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igbt-die Datasheet PDF File

For igbt-die Found Datasheets File :: 1222 Search Time::1.141ms
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				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	CM100BU-12H
OCR Text	IGBT MODULES CM100BU-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F E H E G R L S(4 - Mounting Holes) M GuP EuP D GvP EvP GuN EuN...diE/dt = -200A/s IE = 100A, diE/dt = -200A/s VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - ...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	46.66K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	CM75BU-12H
OCR Text	IGBT MODULES CM75BU-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F E H E G R L S(4 - Mounting Holes) M GuP EuP D GvP EvP GuN E...diE/dt = -150A/s IE = 75A, diE/dt = -150A/s VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - -...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	47.95K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA200SA60S
OCR Text	...rd outline C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.10V @VGE = 15V, IC = 100A n-channel Benefits * Designed f...die contact 16250 -- VGE = 0V 1040 -- pF VCC = 30V See Fig. 7 190 -- = 1.0MHz Typ. 770 100 260 78 5...
Description	600V DC-1 kHz (Standard) Single IGBT in a SOT-227 package INSULATED GATE BIPOLAR TRANSISTOR
File Size	198.14K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTG20N60A4D FN4790 HGTG20N60A4
OCR Text	IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFET...DIE CAPABILITY 80 PACKAGE LIMIT Unless Otherwise Specified ICE, COLLECTOR TO EMITTER CURRENT (A)...
Description	600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode From old datasheet system
File Size	349.40K / 9 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTP20N60A4 HGTG20N60A4 FN4781
OCR Text	...ly between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conductio...DIE CAPABILITY 80 PACKAGE LIMIT Unless Otherwise Specified ICE, COLLECTOR TO EMITTER CURRENT (A)...
Description	600V/ SMPS Series N-Channel IGBTs 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBTs From old datasheet system
File Size	352.12K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4PSC71K
OCR Text	IGBT C INSULATED GATE BIPOLAR TRANSISTOR Features * Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with rein...Die current = 100A) VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 5.0, (See fig. 13a) Repetitive...
Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.83V, @Vge=15V, Ic=60A)
File Size	143.69K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4PSC71U
OCR Text	...e soft switching * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction ...Die current = 100A) VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 5.0, (See fig. 13a) Repetitiv...
Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A)
File Size	142.75K / 8 Page	View it Online	Download Datasheet

				ON Semi
Part No.	MHPM7A15A60A_D ON1949
OCR Text	...lated gate bipolar transistors (IGBT) matched with free-wheeling diodes to give optimal dynamic performance. It has been configured for use ...die (TC = 95C) Free-Wheeling Diode Power Dissipation per die (TC = 95C) Junction Temperature Range S...
Description	15 AMP, 600 VOLT HYBRID POWER MODULE From old datasheet system
File Size	178.89K / 9 Page	View it Online	Download Datasheet

				ON Semi
Part No.	MHPM7A20A60A_D ON1952
OCR Text	...lated gate bipolar transistors (IGBT) matched with free-wheeling diodes to give optimal dynamic performance. It has been configured for use ...die (TC = 95C) Free-Wheeling Diode Power Dissipation per die (TC = 95C) Junction Temperature Range S...
Description	20 AMP, 600 VOLT HYBRID POWER MODULE From old datasheet system
File Size	185.96K / 10 Page	View it Online	Download Datasheet

				ON Semi
Part No.	MHPM7B15A60A_D ON1961
OCR Text	...lated gate bipolar transistors (IGBT) matched with free-wheeling diodes to give optimal dynamic performance. It has been configured for use ...die (TC = 95C) Free-Wheeling Diode Power Dissipation per die (TC = 95C) Junction Temperature Range S...
Description	15 AMP, 600 VOLT HYBRID POWER MODULE From old datasheet system
File Size	180.06K / 9 Page	View it Online	Download Datasheet

For igbt-die Found Datasheets File :: 1222 Search Time::1.141ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |