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Hitachi,Ltd.
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| Part No. |
HL6713G
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| OCR Text |
heterostructure. it is suitable as a light source for laser beam printers, levelers and various other types of optical equipment. hermetic sealing of the package assures high reliability. features visible light output at wavelengths up to... |
| Description |
AlGaInP Laser Diode(AlGalnP激光二极管)
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| File Size |
29.70K /
5 Page |
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it Online |
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Hitachi,Ltd.
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| Part No. |
HL6720G
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| OCR Text |
heterostructure. it is suitable as a light source for pointers, and various other types of optical equipment. hermetic sealing of the package assures high reliability. features visible light output at wavelengths up to 680 nm continuou... |
| Description |
AlGaInP Laser Diodes(AlGalnP激光二极管)
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| File Size |
29.67K /
5 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MMH3111NT1
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| OCR Text |
heterostructure field effect transistor (gaas hfet) broadband high linearity amplifier the mmh3111nt1 is a general purpose amplifier that is internally input and output prematched. it is designed for a broad range of class a, small - signal... |
| Description |
heterostructure Field Effect Transistor
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| File Size |
298.51K /
16 Page |
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it Online |
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Micro Commercial Components, Corp.
Agilent (Hewlett-Packard)
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| Part No. |
HFCT-5915E
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| OCR Text |
...ansmitter section uses a buried heterostructure fabry perot laser as its optical source. the package of this laser is designed to allow repeatable coupling into single mode fiber. in addition, this package has been designed to be compliant ... |
| Description |
155 Mbit/s SMF (40km) SFF Transceiver for SONET/SDH. ATM (OC-3) 155兆位/ s的SONET的单模光纤（40公里）准系统收发 SDH的。自动柜员机（的OC - 3
HFCT-5915E · 155 Mbit/s SMF (40km) SFF Transceiver for SONET/SDH, ATM (OC-3)
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| File Size |
161.22K /
12 Page |
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it Online |
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TriQuint Semiconductor,Inc.
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| Part No. |
TGF4260-SCC
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| OCR Text |
...ingle gate 9.6 mm discrete gaas heterostructure field effect transistor (hfet) designed for high efficiency power applications up to 10.5 ghz in class a and class ab operation. typical performance at 6 ghz is 37dbm power output, 9.5 db gain... |
| Description |
9.6 mm Discrete HFET
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| File Size |
425.97K /
9 Page |
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it Online |
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WJ Communications
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| Part No. |
FP1189
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| OCR Text |
... high performance ?-watt hfet (heterostructure fet) in a low-cost sot-89 surface- mount package. this device works optimally at a drain bias of +8 v and 125 ma to achieve +40 dbm output ip3 performance and an output power of +27 dbm a... |
| Description |
HFET
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| File Size |
566.57K /
10 Page |
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it Online |
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Central Semiconductor, Corp.
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| Part No. |
FP1189-PCB2140S
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| OCR Text |
...igh performance ? - watt hfet (heterostructure fet) in a low - cost sot - 89 surface - mount package. this device works optimally at a drain bias of +8 v and 125 ma to achieve +40 dbm output ip3 perfo rmance and an output power of +27... |
| Description |
1/2 - Watt HFET 1 / 2 -瓦特异质结场效应晶体
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| File Size |
507.31K /
12 Page |
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it Online |
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TriQuint Semiconductor, Inc.
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| Part No. |
TGF4250-SCC
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| OCR Text |
...ingle gate 4.8 mm discrete gaas heterostructure field effect transistor (hfet) designed for high efficiency power applications up to 10.5 ghz in class a and class ab operation. typical performance at 2 ghz is 34 dbm power output, 13 db gain... |
| Description |
DC - 10.5 GHz Discrete HFET X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET
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| File Size |
324.43K /
9 Page |
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it Online |
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