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hdmostm Datasheet PDF File

For hdmostm Found Datasheets File :: 357 Search Time::1.094ms
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				IXYS[IXYS Corporation]
Part No.	IXGH30N60 IXGM30N60A IXGH30N60A IXGM30N60
OCR Text	...tandard packages 2nd generation hdmostm process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125C) l l l l l l BVCE...
Description	LOW VCE(SAT) IGBT, HIGH SPEED IGBT
File Size	61.79K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation] ETC[ETC]
Part No.	IXFN36N100
OCR Text	...tride isolation * Low RDS (on) hdmostm process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g * Low packag...
Description	HiPerFET Power MOSFETs Single Die MOSFET
File Size	121.34K / 4 Page	View it Online	Download Datasheet

				http:// IXYS[IXYS Corporation] IXYS, Corp.
Part No.	IXDD409CI IXDD409PI IXDD409SI IXDD409YI IXDN409CI IXDN409PI IXDN409SI IXDN409YI IXDI409YI IXDI409CI IXDI409PI IXDI409SI DN409CI IXDF409CI
OCR Text	... compatibility of CMOS and IXYS hdmostm processes. * Latch Up Protected * High Peak Output Current: 9A Peak * Operates from 4.5V to 25V * Ability to Disable Output under Faults * High Capacitive Load Drive Capability: 2500pF in <15ns * Matc...
Description	9Amp low-side ultrafast MOSFET driver Power Intergrated ICs 9 Amp Low-Side Ultrafast MOSFET Driver 9 A BUF OR INV BASED MOSFET DRIVER, PDSO8 9 Amp Low-Side Ultrafast MOSFET Driver 9 A BUF OR INV BASED MOSFET DRIVER, PDIP8 9 Amp Low-Side Ultrafast MOSFET Driver 9 A BUF OR INV BASED MOSFET DRIVER, PSSO5
File Size	258.09K / 10 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXTM12N90 IXTH12N90
OCR Text	... standard packages Low RDS (on) hdmostm process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times l Symbol Test Conditions IGSS I DSS R DS(on) VGS = 20 VD...
Description	N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.90Ω的N沟道增强B>MegaMOSFET) MEGAMOS FET Discrete MOSFETs: Standard N-channel Types
File Size	101.80K / 4 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXTM20N60 IXTH20N60
OCR Text	... standard packages Low RDS (on) hdmostm process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from ...
Description	MegaMOS FET Discrete MOSFETs: Standard N-channel Types
File Size	104.50K / 4 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFK36N60 IXFK32N60 IXFN36N60 IXFN32N60
OCR Text	...itride isolation * Low RDS (on) hdmostm process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance * Fast intrinsic Rectifier Applications * DC-DC converters * Synchronous rectifica...
Description	Discrete MOSFETs: HiPerFET Power MOSFETS
File Size	191.79K / 4 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXGP7N60C IXGA7N60C
OCR Text	...ndling capability * HiPerFASTTM hdmostm process * MOS Gate turn-on - drive simplicity Applications * Uninterruptible power supplies (UPS) * Switched-mode and resonant-mode power supplies * AC motor speed control * DC servo and robot drives ...
Description	IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT HIPERFAST IGBT LIGHTSPEED SERIES
File Size	62.74K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation] ETC[ETC]
Part No.	IXSH45N120
OCR Text	...eds up to 20 kHz 2nd generation hdmostm process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ....
Description	High Voltage, Low VCE(sat) IGBT High Voltage Low VCE(sat) IGBT
File Size	87.74K / 4 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXTA2N80 IXTP2N80
OCR Text	...standard packages Low RDS (on) hdmostm process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25C, unles...
Description	HIGH VOLTAGE MOSFET
File Size	45.64K / 2 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXTH10N100 IXTH12N100 IXTM12N100
OCR Text	... standard packages Low RDS (on) hdmostm process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from ...
Description	Discrete MOSFETs: Standard N-channel Types MEGAMOS FET
File Size	105.72K / 4 Page	View it Online	Download Datasheet

For hdmostm Found Datasheets File :: 357 Search Time::1.094ms
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