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  ghz-2.170 Datasheet PDF File

For ghz-2.170 Found Datasheets File :: 3349    Search Time::3.359ms    
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    Motorola
Part No. MRF282
OCR Text ...ice data figure 1. 1.93 ? 2.0 ghz broadband test circuit schematic z11 0.636 x 0.055 microstrip z12 0.303 x 0.055 microstrip z13 0.463 x 0.080 microstrip z14 0.105 x 0.080 microstrip z15 0.452 0.085 x 0.080 microst...
Description MRF282SR1, MRF282ZR1 2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs

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    HMC698LP5

Hittite Microwave Corporation
Part No. HMC698LP5
OCR Text ... diagram typical applications 7 ghz integer n synthesizer (n = 12 - 259) hmc698lp5 / 698lp5e v02.0309 the hmc698lp5(e) is a frequency syn...2 electrical specifi cations, t a = +25 c, vcc = vcc1 = vcc2 = vcc3 = vcc_pd = 5v the hmc698lp5(e...
Description 7 GHz Integer-N Synthesizer SMT

File Size 748.00K  /  12 Page

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    HMC698LP510 HMC698LP5E

Hittite Microwave Corporation
Part No. HMC698LP510 HMC698LP5E
OCR Text ... diagram typical applications 7 ghz integer n synthesizer (n = 12 - 259) hmc698lp5 / 698lp5e v03.0709 the h mc698lp5(e) is a frequency s...2 electrical specifcations, t a = +25 c, vcc = vcc1 = vcc2 = vcc3 = vcc_pd = 5v the h mc698lp5(e)...
Description 7 GHz INTEGER N SYNTHESIZER (N = 12 - 259)
ATM/SONET/SDH SUPPORT CIRCUIT, PQCC32

File Size 833.48K  /  12 Page

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    UPA808 UPA808T UPA808T-T1

NEC[NEC]
Part No. UPA808 UPA808T UPA808T-T1
OCR Text ...P. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz * A Super Mini Mold Package Adopted * Built-in 2 Transistors (2 x 2SC5184) 2.00.2 PACKAGE DRAWINGS (Unit: mm) 2.10.1 1.250.1 1.3 ORDERING INFOR...
Description MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

File Size 63.81K  /  12 Page

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    2SC5758

Hitachi Semiconductor
Part No. 2SC5758
OCR Text ...gain bandwidth product f t 68 ? ghz v ce = 1 v, i c = 5 ma power gain pg 10 13 ? db v ce = 1 v, i c = 5 ma, f = 900 mhz noise figure nf ? 1.0 2.0 db v ce = 1 v, i c = 5 ma, f = 900 mhz 2sc5758 rev.4, jul. 2001, page 3 of 10 0 50 100...
Description Silicon NPN Transistor

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    SANYO
Part No. EC3H11B
OCR Text ...f t 1v ce =1v, i c =5ma 4.5 6.0 ghz f t 2v ce =3v, i c =40ma 8.5 10.5 ghz output capacitance cob v cb =1v, f=1mhz 1.05 1.3 pf reverse transf...2 0.05 0.15 0.15 0.6 0.4 0.65 0.05 0.25 0.25 0.05 1.0 0.5 0.5 0.05 (bottom view) 3 1 2 1 : base 2 : ...
Description Ultrahigh-Frequency Transistors

File Size 37.44K  /  7 Page

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    NE6510179 NE6510179A NE6510179A-T1

NEC[NEC]
Part No. NE6510179 NE6510179A NE6510179A-T1
OCR Text ...t ID Channel to Case f = 1.9 GHz, VDS = 3.5 V, Pin = +25 dBm, Rg = 100 , IDset = 200 mA (RF OFF) Note 2 5 32.5 0.72 58 10.0 8 - - - - C/W dBm A % dB add GL Notes 1. Pin = 0 dBm 2. DC performance is 100% testing. RF perfor...
Description 1 W L-BAND POWER GaAs HJ-FET

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    WJCI[WJ Communication. Inc.]
Part No. FH1_07 FH1 FH1-G
OCR Text ...10.0 18 12 0 1 Frequency (GHz) 2 3 .4 -0 .4 -0 -0 .6 -0 .6 Swp Min 0.01GHz -0.8 -0.8 .0 -2 .0 -2 Swp Min 0.01GHz Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in blue ...
Description High Dynamic Range FET

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    SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
EUDYNA[Eudyna Devices Inc]
Part No. FMM5715X
OCR Text GHz *High Linear Gain: |S21| = 17 dB(Typ) @ f = 60 GHz *Wide Frequency Band : 57 - 64 GHz *Impedance Matched Zin/Zout = 50 DESCRIPTION The F...2.1 Dec. 2005 1 FMM5715X 60GHz Power Amplifier MMIC Output Power vs. Input Power Bias Condit...
Description 60GHz Power Amplifier

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    NEC Corp.
NEC[NEC]
Part No. NES1821B-30
OCR Text ...er and high gain in the 1.8-2.1 GHz band. Internal input matching circuits are designed to optimize performance. The device has a 0.8 mm gate length for increased linear gain. To reduce thermal resistance, the device uses PHS (Plated Heat S...
Description 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

File Size 44.61K  /  8 Page

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