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ghz 1.83 Datasheet PDF File

For ghz 1.83 Found Datasheets File :: 3453 Search Time::1.781ms
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				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	AT-32063 AT-32063-BLK AT-32063-TR1
OCR Text	...e ideal for use in 900 MHz, 1.8 ghz, and 2.4 ghz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 12 dB or more associated gain at a...
Description	Low Current, High Performance NPN Silicon Bipolar Transistor Low Current High Performance NPN Silicon Bipolar Transistor
File Size	74.71K / 8 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC] Eon Silicon Solution
Part No.	EPB018A5 EPB018A5-70 EPB018A7-70 EPB018A9-70
OCR Text	...0 S-PARAMETERS 2V, 15mA FREQ (ghz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 --- S11 --MAG ANG 0.983 -18.6 0.944 -37.5 0.896 -55.5 0.849 -72.6 0.797 -89.2 0.74...
Description	Super Low Noise High Gain Heterojunction FET
File Size	30.90K / 2 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) ETC HP[Agilent(Hewlett-Packard)] Agilent Technologies, Inc.
Part No.	HBFP-0420-BLK HBFP-0420-TR1 HBFP-0420-TR2 HBFP0420
OCR Text	... * Transition Frequency fT = 25 ghz * Typical Performance at 1.8 ghz Associated Gain of 17 dB and Noise Figure of 1.1 dB at 2 V and 5 mA P1dB of 12 dBm at 2 V and 20 mA * Can be Used Without Impedance Matching Description Surface Mount P...
Description	High Performance Isolated Collector Silicon Bipolar Transistor 高性能隔离采集硅双极晶体管
File Size	85.25K / 10 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	NEL200101-24
OCR Text	...ansistors is designed for 1.8-2 ghz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability. OUTLINE DIMENSIONS (Unit: mm) 1.0 MIN. 1.0 MIN. 0.2 1.2 -...
Description	NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
File Size	86.41K / 12 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10043
OCR Text	ghz GOLDMOS (R) Field Effect Transistor Description The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 ghz. Rated at 12 watts, it operates at 45% efficiency with 12 dB gain....
Description	12 Watts/ 1.9-2.0 ghz GOLDMOS Field Effect Transistor 12 Watts, 1.9-2.0 ghz GOLDMOS Field Effect Transistor 12 Watts, 1.9.0 ghz GOLDMOS Field Effect Transistor
File Size	234.06K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10052
OCR Text	ghz GOLDMOSTM Field Effect Transistor Description The PTF 10052 is a 35 Watt LDMOS FET intended for large signal amplifier applications to 1.0 ghz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and full go...
Description	35 Watts/ 1.0 ghz GOLDMOS Field Effect Transistor 35 Watts, 1.0 ghz GOLDMOS Field Effect Transistor
File Size	497.70K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10111
OCR Text	ghz GOLDMOSTM Field Effect Transistor Description The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 ghz. It operates @ 50% efficiency and 16 dB of gain. Nitride surface passivation and full gold m...
Description	6 Watts/ 1.5 ghz GOLDMOS Field Effect Transistor 6 Watts, 1.5 ghz GOLDMOS Field Effect Transistor
File Size	336.82K / 6 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTF10135
OCR Text	ghz GOLDMOSTM Field Effect Transistor Description The PTF 10135 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 ghz. It is rated at 5 watts minimum output power. Nitride ...
Description	5 Watts, 2.0 ghz GOLDMOS Field Effect Transistor
File Size	244.79K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10137
OCR Text	ghz GOLDMOSTM Field Effect Transistor Description The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.0 ghz. It operates at 60% efficiency with 18 dB of gain. Nitride surface passivation and full gol...
Description	12 Watts, 1.0 ghz GOLDMOS Field Effect Transistor 12瓦，1.0 ghz的GOLDMOS场效应晶体管 12 Watts 1.0 ghz GOLDMOS Field Effect Transistor
File Size	174.57K / 6 Page	View it Online	Download Datasheet

				Alpha Industries, Inc. ALPHA[Alpha Industries] Alpha Industries Inc
Part No.	SMV1232 SMV1232-011 SMV1232-074 SMV1232-079 SMV1233-001 SMV1233-003 SMV1233-004 SMV1233-011 SMV1233-073 SMV1233-074 SMV1233-079 SMV1234-001 SMV1234-003 SMV1234-004 SMV1234-011 SMV1234-073 SMV1234-074 SMV1234-079 SMV1235-001 SMV1235-004 SMV1235-011 SMV1235-074 SMV1235-079 SMV1236-001 SMV1236-004 SMV1236-011 SMV1236-074 SMV1236-079 SMV1237-001 SMV1237-004
OCR Text	... VCOs to frequencies beyond 2.5 ghz. The SMV1232-SMV1237 series is fully characterized for capacitance and resistance over temperature. SPIC...1.5 nH Single SOT-23 o SMV1233-001 o SMV1234-001 o SMV1235-001 o SMV1236-001 o SMV1237-001 LS = 1...
Description	Hyperabrupt Tuning Varactors Hyperabrupt调谐变容二极
File Size	42.55K / 4 Page	View it Online	Download Datasheet

For ghz 1.83 Found Datasheets File :: 3453 Search Time::1.781ms
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