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For gaas- Found Datasheets File :: 18221 Search Time::2.406ms
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				MACOM[Tyco Electronics]
Part No.	AM50-0011 AM50-0011SMB AM50-0011TR AM50-0011TR3000
OCR Text	...0-0011 is a high dynamic range, GaAs MMIC, low noise amplifier in a low-cost SOT-26 package. It employs external matching to obtain optimum noise figure and intercept performance. The AM50-0011 may be operated with supply voltages of +5 V. ...
Description	Circular Connector; No. of Contacts:56; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No LJT 128C 128#22D SKT WALL RECP Circular Connector; No. of Contacts:128; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No High Dynamic Range LNA 800 - 1000 MHz
File Size	111.64K / 4 Page	View it Online	Download Datasheet

				MA-Com MACOM[Tyco Electronics]
Part No.	AM50-0015 AM50-0015SMB AM50-0015TR AM50-0015TR3000
OCR Text	...-0015 broadband gain stage is a GaAs MMIC amplifier in a low-cost miniature SOT-363 surface mount plastic package. The AM50-0015 employs a monolithic 1-stage self-biased design featuring a convenient 50 ohm input/ output impedance that mini...
Description	200-3000 MHz, miniature broadband gain stage Miniature Broadband Gain Stage 200 - 3000 MHz
File Size	114.73K / 7 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-10100 ATF-10100-GP3
OCR Text	....5-12 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, ...
Description	0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	46.17K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136
OCR Text	....5-12 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation a...
Description	ER 3C 3#16 PIN RECP BOX 0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	41.86K / 3 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236
OCR Text	....5-12 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation a...
Description	ER 2C 2#16S PIN RECP BOX 0.5?12 GHz Low Noise Gallium Arsenide FET 0.5-12 GHz Low Noise Gallium Arsenide FET 0.512 GHz Low Noise Gallium Arsenide FET
File Size	42.09K / 3 Page	View it Online	Download Datasheet

				Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
Part No.	ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736
OCR Text	....5-12 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconcnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation ...
Description	0.5-12 GHz General Purpose Gallium Arsenide FET 0.5?12 GHz General Purpose Gallium Arsenide FET 0.512 GHz General Purpose Gallium Arsenide FET
File Size	44.24K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-13100 ATF-13100-GP3
OCR Text	...Typical P1 dB at 12 GHz This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. The recommend...
Description	2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET) 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管（2-18 GHz的低噪声砷化镓场效应管）
File Size	38.39K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-13336 ATF-13336-STR ATF-13336-TR1
OCR Text	... 2-16 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 36 micro-X...
Description	2-16 GHz Low Noise Gallium Arsenide FET
File Size	41.75K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-13736 ATF-13736-STR ATF-13736-TR1
OCR Text	... 2-16 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 36 micro-X Package 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged, relia...
Description	2-16 GHz Low Noise Gallium Arsenide FET
File Size	44.11K / 4 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. Agilent (Hewlett-Packard) ETC[ETC] HP[Agilent(Hewlett-Packard)] List of Unclassifed Manufacturers
Part No.	ATF-13786 ATF-13786-STR ATF-13786-TR1 ATF13786
OCR Text	...VDS = 3 V, IDS = 40 mA. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 5-43 59...
Description	Surface Mount Gallium Arsenide FET for Oscillators
File Size	43.73K / 3 Page	View it Online	Download Datasheet

For gaas- Found Datasheets File :: 18221 Search Time::2.406ms
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